한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제30권7호
  • /
  • Pages.437-440
  • /
  • 2017
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Indium-Zinc 산화물 박막 트랜지스터 기반의 N-MOS 인버터

Indium-Zinc Oxide Thin Film Transistors Based N-MOS Inverter

  • 김한상 (충북대학교 전자정보대학) ;
  • 김성진 (충북대학교 전자정보대학)
  • Kim, Han-Sang (College of Electrical and Computer Engineering, Chungbuk National University) ;
  • Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
  • 투고 : 2017.01.12
  • 심사 : 2017.04.12
  • 발행 : 2017.07.01
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초록

We report on amorphous thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers that were fabricated via a solution process. We prepared the IZO semiconductor solution with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions. The solution- processed IZO TFTs showed good performance: a field-effect mobility of $7.29cm^2/Vs$, a threshold voltage of 4.66 V, a subthreshold slope of 0.48 V/dec, and a current on-to-off ratio of $1.62{\times}10^5$. To investigate the static response of our solution-processed IZO TFTs, simple resistor load-type inverters were fabricated by connecting a $2-M{\Omega}$ resistor. Our IZOTFTbased N-MOS inverter performed well at operating voltage, and therefore, isa good candidate for advanced logic circuits and display backplane.

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참고문헌

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