한국재료학회지 (Korean Journal of Materials Research)

  • 제27권6호
  • /
  • Pages.295-300
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  • 2017
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  • 1225-0562(pISSN)
  • /
  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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전자 사이클로트론 공명 플라즈마와 열 원자층 증착법으로 제조된 Al2O3 박막의 물리적·전기적 특성 비교

Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods

  • 양대규 (충남대학교 신소재공학과) ;
  • 김양수 (충남대학교 신소재공학과) ;
  • 김종헌 (충남대학교 신소재공학과) ;
  • 김형도 (충남대학교 신소재공학과) ;
  • 김현석 (충남대학교 신소재공학과)
  • Yang, Dae-Gyu (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Yang-Soo (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Jong-Heon (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Hyoung-Do (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Hyun-Suk (Department of Materials Science and Engineering, Chungnam National University)
  • 투고 : 2016.11.11
  • 심사 : 2017.04.11
  • 발행 : 2017.06.27
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초록

Aluminum-oxide($Al_2O_3$) thin films were deposited by electron cyclotron resonance plasma-enhanced atomic layer deposition at room temperature using trimethylaluminum(TMA) as the Al source and $O_2$ plasma as the oxidant. In order to compare our results with those obtained using the conventional thermal ALD method, $Al_2O_3$ films were also deposited with TMA and $H_2O$ as reactants at $280^{\circ}C$. The chemical composition and microstructure of the as-deposited $Al_2O_3$ films were characterized by X-ray diffraction(XRD), X-ray photo-electric spectroscopy(XPS), atomic force microscopy(AFM) and transmission electron microscopy(TEM). Optical properties of the $Al_2O_3$ films were characterized using UV-vis and ellipsometry measurements. Electrical properties were characterized by capacitance-frequency and current-voltage measurements. Using the ECR method, a growth rate of 0.18 nm/cycle was achieved, which is much higher than the growth rate of 0.14 nm/cycle obtained using thermal ALD. Excellent dielectric and insulating properties were demonstrated for both $Al_2O_3$ films.

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참고문헌

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