JSTS:Journal of Semiconductor Technology and Science

  • 제17권2호
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  • Pages.204-209
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  • 2017
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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AlGaN/GaN-on-Si Power FET with Mo/Au Gate

  • Kim, Hyun-Seop (School of Electrical and Electronic Engineering, Hongik University) ;
  • Jang, Won-Ho (School of Electrical and Electronic Engineering, Hongik University) ;
  • Han, Sang-Woo (School of Electrical and Electronic Engineering, Hongik University) ;
  • Kim, Hyungtak (School of Electrical and Electronic Engineering, Hongik University) ;
  • Cho, Chun-Hyung (Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik University) ;
  • Oh, Jungwoo (School of Integrated Technology, Yonsei University) ;
  • Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)
  • 투고 : 2016.08.24
  • 심사 : 2016.10.20
  • 발행 : 2017.04.30
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초록

We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

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참고문헌

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