Transactions on Electrical and Electronic Materials

  • 제18권1호
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  • Pages.51-54
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  • 2017
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Influence of Channel Thickness Variation on Temperature and Bias Induced Stress Instability of Amorphous SiInZnO Thin Film Transistors

  • Lee, Byeong Hyeon (Department of Semiconductor engineering, Cheongju University) ;
  • Lee, Sang Yeol (Department of Semiconductor engineering, Cheongju University)
  • 투고 : 2016.11.01
  • 심사 : 2016.12.01
  • 발행 : 2017.02.25
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초록

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

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피인용 문헌

  1. Influence of Channel Layer Thickness on the Instability of Amorphous SiZnSnO Thin Film Transistors Under Negative Bias Temperature Stress 2018, https://doi.org/10.1002/pssa.201700698
  2. Effect of Channel Layer Thickness on Electrical and Thermal Stabilities of High-Mobility Zinc Oxynitride Thin-Film Transistors vol.6, pp.9, 2017, https://doi.org/10.1149/2.0101709jss
  3. Effect of Nitrogen Doping on the Electrical Performance of Amorphous Si–In–Zn–O Thin Film Inverter pp.2092-7592, 2018, https://doi.org/10.1007/s42341-018-0082-0
  4. Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition vol.8, pp.60, 2018, https://doi.org/10.1039/C8RA07266C
  5. Effect of Annealing Temperature on Electrical Properties and Stability of Si–Zn–Sn–O Thin Film Transistors Under Temperature Stress vol.19, pp.1, 2018, https://doi.org/10.1007/s42341-018-0011-2