Transactions on Electrical and Electronic Materials

  • 제18권1호
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  • Pages.13-15
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  • 2017
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Low Emissivity Property of Amorphous Oxide Multilayer (SIZO/Ag/SIZO) Structure

  • Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
  • 투고 : 2016.08.19
  • 심사 : 2016.11.01
  • 발행 : 2017.02.25
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초록

Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.

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피인용 문헌

  1. Characteristics of IGZO/Ni/IGZO tri-layer films deposited by DC and RF magnetron sputtering vol.205, 2017, https://doi.org/10.1016/j.matlet.2017.06.077
  2. Enhanced Light Extraction from p-Si Nanowires/n-IGZO Heterojunction LED by Using Oxide–Metal–Oxide Structured Transparent Electrodes vol.121, pp.12, 2017, https://doi.org/10.1021/acs.jpcc.7b00674