A Study on the Optimization of the ITO/Ag/ITO Multilayer Transparent Electrode by Using In-line Magnetron Sputtering

인라인 마그네트론 스퍼티링에 의한 ITO/Ag/ITO 다층 구조 투명전극의 최적화에 관한 연구

  • Lee, Seung Yong (Department of Electronics Engineering, Gachon University) ;
  • Yoon, Yeo Tak (Department of Electronics Engineering, Gachon University) ;
  • Cho, Eou Sik (Department of Electronics Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronics Engineering, Gachon University)
  • 이승용 (가천대학교 전자공학과) ;
  • 윤여탁 (가천대학교 전자공학과) ;
  • 조의식 (가천대학교 전자공학과) ;
  • 권상직 (가천대학교 전자공학과)
  • Received : 2016.09.29
  • Accepted : 2016.11.24
  • Published : 2017.03.01


Indium tin oxide (ITO) thin films show a low sheet resistance and high transmittance in the visible range of the spectrum. Therefore, they play an important role as transparent electrodes for flat panel displays. However, their resistivity is rather high for use as a transparent electrode in large displays. One way to improve electrical and optical properties in large displays is to use ITO/Ag/ITO multilayer films. ITO/Ag/ITO multilayer films have lower sheet resistance than single layer ITO films with the same thickness. Prior to the ITO/Ag/ITO multilayer experiments, optimal condition for thickness change are necessary. Their thicknesses were deposited differently in order to analyze electrical and optical properties. However, when optimal single film characteristics are applied to ITO/Ag/ITO multilayer films, other phenomena appeared. After analyzing the electrical and optical properties by changing ITO and Ag film thickness, ITO/Ag/ITO multilayer films were optimized. By combining ITO film at $586\;{\AA}$ and Ag film at 10 nm, the ITO/Ag/ITO multilayer films showed optimized high optical transmittance of 87.65%, and the low sheet resistance of $5.5{\Omega}/sq$.


Supported by : 한국연구재단, 산업통상자원부


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