Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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플렉시블 디스플레이의 적용을 위한 산화물 반도체 박막 트랜지스터의 기술 동향과 이슈

  • 옥경철 (한양대학교 신소재공학부) ;
  • 한기림 (한양대학교 신소재공학부) ;
  • 김동현 (한양대학교 신소재공학부) ;
  • 박진성 (한양대학교 신소재공학부)
  • Published : 2017.02.01
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References

  1. Cheng, I-Chun, et al. "Stress control for overlay registration in a-Si: H TFTs on flexible organicpolymer-foil substrates." Journal of the Society for Information Display 13, pp. 563-568 (2005). https://doi.org/10.1889/1.2001213
  2. Ok, Kyung-Chul, et al. "The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates." Applied Physics Letters 104 pp. 063508 (2014). https://doi.org/10.1063/1.4864617
  3. Ok, Kyung-Chul, et al. "Effect of Alumina Buffers on the Stability of Top-Gate Amorphous InGaZnO Thin-Film Transistors on Flexible Substrates." IEEE Electron Device Letters 36, pp. 917-919 (2015). https://doi.org/10.1109/LED.2015.2461003
  4. Lee, Jaeseob, et al. "The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors." Applied Physics Letters 95, pp. 3502 (2009).
  5. 대한기계학회논문집 B권, 제35권 제1호, pp. 17-22 (2011).
  6. N. S. Munzenrieder et. al. "Testing of flexible InGaZnO-based thin-film transistors under mechanical strain." The European Physical Journal Applied Physics 55, pp. 23904 (2011). https://doi.org/10.1051/epjap/2011100416
  7. Y. Kumaresan et. al. "Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer." Scientific report 6, pp. 37764 (2016). https://doi.org/10.1038/srep37764
  8. J. Sheng et. al. "A Study on the Electrical Properties of Atomic Layer Deposition Grown InOx on Flexible Substrates with Respect to $N_2O$ Plasma Treatment and the Associated Thin-Film Transistor Behavior under Repetitive Mechanical Stress." ACS Applied Materials and Interfaces 8, pp. 31136-31143 (2016). https://doi.org/10.1021/acsami.6b11815
  9. T. Sekitani et. al. "Ultra-flexible organic field-effect transistors embedded at a neutral strain position." Applied Physics Letters 87, pp. 173502 (2005). https://doi.org/10.1063/1.2115075