Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

산화물 반도체

  • 김양수 (충남대학교 신소재공학과) ;
  • 김종헌 (충남대학교 신소재공학과) ;
  • 양대규 (충남대학교 신소재공학과) ;
  • 김형도 (충남대학교 신소재공학과) ;
  • 김현석 (충남대학교 신소재공학과)
  • Published : 2017.02.01
Download PDF
⟨ Previous Next ⟩

Abstract

Keywords

References

  1. K. Nomura, et al., "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature 432 (2004) 488. https://doi.org/10.1038/nature03090
  2. H. Hosono, et al., "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application," J. Non-Cryst. Solids 352 (2006) 851-858. https://doi.org/10.1016/j.jnoncrysol.2006.01.073
  3. C.-J. Kim, et al., "Amorphous hafnium-indiumzinc -oxide semiconductor thin film transistors," Appl. Phys. Lett. 95 (2009) 252103. https://doi.org/10.1063/1.3275801
  4. H. -S. Kim, et al., "Anion control as a strategy to achieve high-mobility and high stability oxide thin-film transistors," Sci. Rep. 3, 1459; (2013). https://doi.org/10.1038/srep01459
  5. Y. Ye, et al., "High mobility amorphous zinc oxynitride semiconductor material for thin film transistors," J. Appl. Phys. 106 (2009) 074512 https://doi.org/10.1063/1.3236663
  6. J. H. Shin, J. S. Lee, C. S. Hwang, S. H. K. Park, W. S. Cheong, M. K. Ryu, C. W. Byun, J. I. Lee, and H. Y. Chu, "Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors," ETRI J. 31 62 (2009) https://doi.org/10.4218/etrij.09.0208.0266
  7. J. S. Park, et al., "Review of recent developments in amorphous oxide semiconductor thin-film transistor devices," Thin Solid Films 520 1679-1693 (2012) https://doi.org/10.1016/j.tsf.2011.07.018
  8. Arai, T. & Sasaoka, T., "Emergent oxide TFT technologies for next-generation AMOLED Displays," 2011 SID International Symposium Digest of Technical Papers 42, 710-713 (2011).
  9. J. Park, et al., "The effects of active layer thickness and annealing conditions on the electrical per formance of ZnON thin-film transistors," Journal of Alloys and Compounds 688, 666-671 (2016) https://doi.org/10.1016/j.jallcom.2016.07.245
  10. A. Janotti and C. G. V. Walle, "Native Point Defects in ZnO," Phys. Rev. B, 76 165202 (2007). https://doi.org/10.1103/PhysRevB.76.165202
  11. Y. S. Kim, et al., "High Performance Thin-Film Transistors Based on Zinc Oxynitride Semiconductors Experimental and First-Principles Studies" Korean J. Mater. Res. Vol. 26, No. 1 (2016)
  12. L. Yan, et al., "The Development of High Mobility Zinc Oxynitride TFT for AMOLED," SID 2015 Digest, 51.2, 769-771 (2015)