Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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An Anti-Boundary Switching Digital Delay-Locked Loop

안티-바운드리 스위칭 디지털 지연고정루프

  • Yoon, Junsub (Dept. of Electronic & Electrical Engineering, Hongik University) ;
  • Kim, Jongsun (Dept. of Electronic & Electrical Engineering, Hongik University)
  • Received : 2017.12.05
  • Accepted : 2017.12.28
  • Published : 2017.12.31
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Abstract

In this paper, we propose a new digital delay-locked loop (DLL) for high-speed DDR3/DDR4 SDRAMs. The proposed digital DLL adopts a fine delay line using phase interpolation to eliminate the jitter increase problem due to the boundary switching problem. In addition, the proposed digital DLL utilizes a new gradual search algorithm to eliminate the harmonic lock problem. The proposed digital DLL is designed with a 1.1 V, 38-nm CMOS DRAM process and has a frequency operating range of 0.25-2.0 GHz. It has a peak-to-peak jitter of 1.1 ps at 2.0 GHz and has a power consumption of about 13 mW.

본 논문에서는 고속 DDR3/DDR4 SDRAM을 위한 새로운 디지털 지연고정루프 (delay-locked loop: DLL)를 제안한다. 제안하는 디지털 DLL은 디지털 지연라인의 boundary switching 문제에 의한 jitter 증가 문제를 제거하기 위하여 위상보간 (phase interpolation) 방식의 파인지연라인 (fine delay line)을 채택하였다. 또한, 제안하는 디지털 DLL은 harmonic lock 문제를 제거하기 위하여 새로운 점진직 검색 (gradual search) 알고리즘을 사용한다. 제안하는 디지털 DLL은 1.1V, 38-nm CMOS DRAM 공정으로 설계되었으며, 0.25-2.0 GHz의 주파수 동작 영역을 가진다. 2.0 GHz에서 1.1 ps의 피크-투-피크 (p-p) 지터를 가지며, 약 13 mW의 전력소모를 가진다.

Keywords

References

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