JSTS:Journal of Semiconductor Technology and Science

  • 제16권5호
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  • Pages.664-674
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  • 2016
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

  • Reddy, P.R. Sekhar (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC) Chonbuk National University) ;
  • Janardhanam, V. (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC) Chonbuk National University) ;
  • Jyothi, I. (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC) Chonbuk National University) ;
  • Yuk, Shim-Hoon (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC) Chonbuk National University) ;
  • Reddy, V. Rajagopal (Department of Physics, Sri Venkateswara University) ;
  • Jeong, Jae-Chan (Electronics & Telecommunication Research Institute) ;
  • Lee, Sung-Nam (Department of Nano-Optical Engineering, Korea Polytechnic University) ;
  • Choi, Chel-Jong (School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC) Chonbuk National University)
  • 투고 : 2016.03.08
  • 심사 : 2016.06.14
  • 발행 : 2016.10.30
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초록

The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

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