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A Study of the Electrical Characteristics of WOx Material for Non-Volatile Resistive Random Access Memory

비-휘발성 저항 변화 메모리 응용을 위한 WOx 물질의 전기적 특성 연구

  • Jung, Kyun Ho (Department of Nano Science & Technology, University of Seoul) ;
  • Kim, Kyong Min (Department of Nano Engineering, University of Seoul) ;
  • Song, Seung Gon (Department of Nano Science & Technology, University of Seoul) ;
  • Park, Yun Sun (Department of Industrial and management Engineering, Myongi University) ;
  • Park, Kyoung Wan (Department of Nano Science & Technology, University of Seoul) ;
  • Sok, Jung Hyun (Department of Nano Science & Technology, University of Seoul)
  • 정균호 (서울시립대학교 나노과학기술학과) ;
  • 김경민 (서울시립대학교 나노공학과) ;
  • 송승곤 (서울시립대학교 나노과학기술학과) ;
  • 박윤선 (명지대학교 산업경영공학부) ;
  • 박경완 (서울시립대학교 나노과학기술학과) ;
  • 석중현 (서울시립대학교 나노과학기술학과)
  • Received : 2016.04.19
  • Accepted : 2016.04.24
  • Published : 2016.05.01

Abstract

In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.

Keywords

References

  1. W. Y. Chang, Y. C. Lai, T. B. Wu, S. F. Wang, F. Chen, and M. J. Tsai, Appl. Phys. Lett., 92, 022110 (2008). [DOI: http://dx.doi.org/10.1063/1.2834852]
  2. S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, and I. S. Byun, Appl. Phys. Lett., 85, 5655 (2004). [DOI: http://dx.doi.org/10.1063/1.1831560]
  3. C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J. S. Zhao, and C. S. Hwang, Appl. Phys. Lett., 86, 262907 (2005). [DOI: http://dx.doi.org/10.1063/1.1968416]
  4. H.S.P. Wong, H. Y. Lee, S. Yu, Y. S. Chen, Y. Wu, P. S. Chen, B. I. Lee, F. T. Chen, and M. J. Tsai, Institute of Electrical and Electronics Engineers, 100, 1951 (2012). [DOI: http://dx.doi.org/10.1109/JPROC.2012.2190369]
  5. Y. M. Kim and J. S. Lee, J. Appl. Phys., 104, 114115 (2008). [DOI: http://dx.doi.org/10.1063/1.3041475]
  6. Z. Weil, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, IEEE International Electron Devices Meeting (Hilton San Francisco, USA, 2008).
  7. H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, F. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, M. J. Tsai, and C. Lien, IEEE Electron Devices Lett., 30, 703 (2009). [DOI: http://dx.doi.org/10.1109/LED.2009.2017213]
  8. E. K. Lai, W. C. Chien, Y. C. Chen, T. J. Hong, Y. Y. Lin, K. P. Chang, Y. D. Yao, P. Lin, S. F. Horng, J. Gong, S. C. Tsai, C. H. Lee, S. H. Hsieh, C. F. Chen, Y. H. Shih, K. Y. Hsieh, R. Liu, and C. Y. Lu, J. Appl. Phys., 49, 04DD17 (2010).
  9. D. S. Shang, L. Shi, J. R. Sun, B. G. Shen, F. Zhuge, R. W. Li, and Y. G. Zhao, Appl. Phys. Lett., 96, 072103 (2010). [DOI: http://dx.doi.org/10.1063/1.3300637]
  10. S. J. Jung, J. M. Kong, S. H. Song, K. H. Lee, T. H. Lee, H. S. Hwang, and S. H. Jeon, Appl. Phys. Lett., 99, 142110 (2011). [DOI: http://dx.doi.org/10.1063/1.3621826]
  11. B. U. Jang, A. I. Inamdara, J. M. Kim, W. Jung, H. S. Im, H. S. Kim, and J. P. Hong, Thin Solid Films, 520, 5451 (2012). [DOI: http://dx.doi.org/10.1016/j.tsf.2012.03.111]
  12. J. H. Song, A. I. Inamdar, B. U. Jang, K. Y. Jeon, Y. S. Kim, K. H. Jung, Y. M. Kim, H. S. Im, W. Jung, H. S. Kim, and J. P. Hong, Applied Physics Express, 3, 091101 (2010). [DOI: http://dx.doi.org/10.1143/APEX.3.091101]
  13. S. U. Sharath, T. Bertaud, J. Kurian, E. Hildebrandt, C. Walczyk, P. Calka, P. Zaumseil, M. Sowinska, D. Walczyk, A. Gloskovskii, T. Schroeder, and L. Alff, Appl. Phys. Lett., 104, 063502 (2014). [DOI: http://dx.doi.org/10.1063/1.4864653]
  14. S. J. Park, J. P. Lee, J. S. Jang, H. Rhu, H. Yu, B. Y. You, C. S. Kim, K. J. Kim, Y. J. Cho, S. G. Baik, and W. Lee, IOPscience Nanotechnology, 24, 295202 (2013). [DOI: http://dx.doi.org/10.1088/0957-4484/24/29/295202]
  15. A. R. Lee, Y. C. Bae, G. H. Baek, J. B. Chung, T. S. Kang, J. S. Lee, J. G. Park, H. S. Im, and J. P. Hong, Appl. Phys. Lett., 103, 183510 (2013). [DOI: http://dx.doi.org/10.1063/1.4828561]
  16. D. S. Shang, Q. Wang, D. Chen, R. Dong, X. M. Li, and W. Q. Zhang, Phys. Rev., B, 73, 245427 (2006). [DOI: http://dx.doi.org/10.1103/PhysRevB.73.245427]
  17. T. Nagata, M. Haemori, Y. Yamashita, H. Yoshikawa, Y. Iwashita, K. Kobayashi, and T. Chikyow, Appl. Phys. Lett., 97, 082902 (2010). [DOI: http://dx.doi.org/10.1063/1.3483756]
  18. J. M. Kim, D. H. Kim, Y. C. Jo, J. S. Han, H. S. Woo, H. S. Kim, K. K. Kim, J. P. Hong, and H. S. Im, Thin Solid Films, 589, 188 (2015). [DOI: http://dx.doi.org/10.1016/j.tsf.2015.05.002]
  19. Y. C. Jo, J. M. Kim, H. S. Woo, D. H. Kim, J. W. Lee, A. I. Inamdar, H. S. Im, and H. S. Kim, Current Appl. Phys., 14, S93 (2014). [DOI: http://dx.doi.org/10.1016/j.cap.2013.11.016]
  20. Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett., 98, 146403 (2007). [DOI: http://dx.doi.org/10.1103/PhysRevLett.98.146403]
  21. Y. E. Syu, T. C. Chang, T. M. Tsai, Y. C. Hung, K. C. Chang, M. J. Tsai, M. J. Kao, and S. M. Sze, IEEE Electron Devices Lett., 32, 545 (2011). [DOI: http://dx.doi.org/10.1109/LED.2011.2104936]