Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Charge Trapping Mechanism in Amorphous Si-In-Zn-O Thin-Film Transistors During Positive Bias Stress

  • Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
  • Received : 2016.07.27
  • Accepted : 2016.09.19
  • Published : 2016.12.25
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Abstract

The mechanism for instability under PBS (positive bias stress) in amorphous SIZO (Si-In-Zn-O) thin-film transistors was investigated by analyzing the charge trapping mechanism. It was found that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. This result suggests that charge trapping in gate dielectric, and/or in oxide semiconductor bulk, and/or at the channel/dielectric interface is a more dominant mechanism than the creation of defects in the SIZO-TFTs.

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References

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