Applied Microscopy

  • 제45권3호
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  • Pages.183-188
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  • 2015
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  • 2287-5123(pISSN)
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  • 2287-4445(eISSN)
한국현미경학회 (Korean Society of Microscopy)
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Three-Dimensional Automated Crystal Orientation and Phase Mapping Analysis of Epitaxially Grown Thin Film Interfaces by Using Transmission Electron Microscopy

  • Kim, Chang-Yeon (Gangneung Center, Korea Basic Science Institute) ;
  • Lee, Ji-Hyun (Division of Electron Microscopic Research, Korea Basic Science Institute) ;
  • Yoo, Seung Jo (Division of Electron Microscopic Research, Korea Basic Science Institute) ;
  • Lee, Seok-Hoon (Division of Electron Microscopic Research, Korea Basic Science Institute) ;
  • Kim, Jin-Gyu (Division of Electron Microscopic Research, Korea Basic Science Institute)
  • 투고 : 2015.09.03
  • 심사 : 2015.09.10
  • 발행 : 2015.09.30
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초록

Due to the miniaturization of semiconductor devices, their crystal structure on the nanoscale must be analyzed. However, scanning electron microscope-electron backscatter diffraction (EBSD) has a limitation of resolution in nanoscale and high-resolution electron microscopy (HREM) can be used to analyze restrictive local structural information. In this study, three-dimensional (3D) automated crystal orientation and phase mapping using transmission electron microscopy (TEM) (3D TEM-EBSD) was used to identify the crystal structure relationship between an epitaxially grown CdS interfacial layer and a $Cu(In_xGa_{x-1})Se_2$ (CIGS) solar cell layer. The 3D TEM-EBSD technique clearly defined the crystal orientation and phase of the epitaxially grown layers, making it useful for establishing the growth mechanism of functional nano-materials.

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참고문헌

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