Applied Microscopy

Korean Society of Microscopy (한국현미경학회)
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Three-Dimensional Automated Crystal Orientation and Phase Mapping Analysis of Epitaxially Grown Thin Film Interfaces by Using Transmission Electron Microscopy

  • Kim, Chang-Yeon (Gangneung Center, Korea Basic Science Institute) ;
  • Lee, Ji-Hyun (Division of Electron Microscopic Research, Korea Basic Science Institute) ;
  • Yoo, Seung Jo (Division of Electron Microscopic Research, Korea Basic Science Institute) ;
  • Lee, Seok-Hoon (Division of Electron Microscopic Research, Korea Basic Science Institute) ;
  • Kim, Jin-Gyu (Division of Electron Microscopic Research, Korea Basic Science Institute)
  • Received : 2015.09.03
  • Accepted : 2015.09.10
  • Published : 2015.09.30
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Abstract

Due to the miniaturization of semiconductor devices, their crystal structure on the nanoscale must be analyzed. However, scanning electron microscope-electron backscatter diffraction (EBSD) has a limitation of resolution in nanoscale and high-resolution electron microscopy (HREM) can be used to analyze restrictive local structural information. In this study, three-dimensional (3D) automated crystal orientation and phase mapping using transmission electron microscopy (TEM) (3D TEM-EBSD) was used to identify the crystal structure relationship between an epitaxially grown CdS interfacial layer and a $Cu(In_xGa_{x-1})Se_2$ (CIGS) solar cell layer. The 3D TEM-EBSD technique clearly defined the crystal orientation and phase of the epitaxially grown layers, making it useful for establishing the growth mechanism of functional nano-materials.

Keywords

References

  1. Caro L D, Giannini C, Tapfer L, Schonherr H P, Daweritz L, and Ploog K G (1998) Validity of Vegard's rule for the lattice parameter and the stiffness elastic constant ratios of the AlGaAs ternary compound. Solid State Commun. 108, 599-603. https://doi.org/10.1016/S0038-1098(98)00374-3
  2. Darakchieve V, Beckers M, Xie M Y, Hultman L, Monemar B, Carlin J F, Feltin E, Gonschorek M, and Grandjean N (2008) Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al rich $Al_{1-x}In_xN$ films grown on sapphire. J. Appl. Phys. 103, 103513-103517. https://doi.org/10.1063/1.2924426
  3. Kaneshiro J, Gaillard N, Rocheleau R, and Miller E (2010) Advances in copper-chalcopyrite thin films for solar energy conversion. Sol. Energy Mater. Sol. Cells 94, 12-16. https://doi.org/10.1016/j.solmat.2009.03.032
  4. Kaur I, Pandya D K, and Chopra K L (1980) Growth kinetics and polymorphism of chemically deposited CdS films. J. Electrochem. Soc. 127, 943-948. https://doi.org/10.1149/1.2129792
  5. Kousuke T, Mitsuru O, Katsumasa N, and Masaaki F (2011) Preparation and characterization of Co/Pd epitaxial multilayer films with different orientations. Jpn. J. Appl. Phys. 50, 073001-1-7. https://doi.org/10.7567/JJAP.50.073001
  6. Lebedev M V (2006) Interaction of the solvated hydrosulfide ions with GaAs surface at the semiconductor/electrolyte interfaces: chemical and electronic processes. In: Trends in Surface Science Research, ed. Norris C P, pp. 97-129, (Nova Science Publishers, New York).
  7. Lee Y H, Kim K B, Kim J G, Park K B, Im W B, and Kim Y I (2013) Crystallographic study of CIGS solar cell module via structural refinement. J. Nanoelectron. Optoelectron. 8, 575-578. https://doi.org/10.1166/jno.2013.1519
  8. Moeck P, Rouvimov S, Rauch E F, Veron M, Kirmse H, Hausler I, Neumann W, Bultreys D, Maniette Y, and Nicolopoulos S (2011) High spatial resolution semi-automatic crystallite orientation and phase mapping of nanocrystals in transmission electron microscopes. Cryst. Res. Technol. 46, 589-606. https://doi.org/10.1002/crat.201000676
  9. Najanishi T and Ito K (1994) Properties of chemical bath deposited CdS thin films. Sol. Energy Mater. Sol. Cells 35, 171-178. https://doi.org/10.1016/0927-0248(94)90137-6
  10. Rauch E F, Portillo J, Nicolopoulos S, Bultreys D, Rouvimov S, and Moeck P (2010) Automated nanocrystal orientation and phase mapping in the transmission electron microscope on the basis of precession electron diffraction. Z. Kristallogr. 225, 103-109.
  11. Vegard L (1921) Die konstitution der mischkristalle und die raumfullung der atome. Z. Phys. 5, 17-26. https://doi.org/10.1007/BF01349680
  12. Wurz R, Marron D F, Meeder A, Rumberg A, Badu S M, Schedel-Niedrig T, Bloeck U, Schubert-Bischoff P, and Lux-Steiner M Ch (2003) Formation of an interfacial $MoSe_2$ layer in CVD grown $CuGaSe_2$ based thin film solar cells. Thin Solid Films 431-432, 398-402. https://doi.org/10.1016/S0040-6090(03)00261-X
  13. Yoo S J, Kim J G, Kim C Y, Kim E M, Lee J H, Kim Y M, Yoo S J, Kim S B, and Kim Y J (2012) Characterization of crystallographic properties of GaN thin film using automated crystal orientation mapping with TEM. Met. Mater. Int. 18, 997-1001. https://doi.org/10.1007/s12540-012-6011-6
  14. Zelaya-Angel O, Alvarado-Gil J J, Lozada-Morales R, Vargas H, and Ferreira da Silva A (1994) Band-gap shift CdS semiconductor by photoacoustic spectroscopy: evidence of a cubic to hexagonal lattice transition. Appl. Phys. Lett. 64, 291-293. https://doi.org/10.1063/1.111184