한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제28권8호
  • /
  • Pages.481-485
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  • 2015
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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용액 공정으로 형성된 n-ZTO/p-SiC 이종접합 열처리 효과

Effects of Annealing on Solution Processed n-ZTO/p-SiC Heterojunction

  • 정영석 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Jeong, Young-Seok (Department of Electronic Materials Engineering, KwangWoon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, KwangWoon University)
  • 투고 : 2015.06.26
  • 심사 : 2015.07.24
  • 발행 : 2015.08.01
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초록

We investigated the effects of annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunction diodes. A ZTO thin film layer was grown on p-type 4H-SiC substrate by using solution process. The ZTO/SiC heterojunction structures annealed at $500^{\circ}C$ show that $I_{on}/I_{off}$ increases from ${\sim}5.13{\times}10^7$ to ${\sim}1.11{\times}10^9$ owing to the increased electron concentration of ZTO layer as confirmed by capacitance-voltage characteristics. In addition, the electrical characterization of ZTO/SiC heterojunction has been carried out in the temperature range of 300~500 K. When the measurement temperature increased from 300 K to 500 K, the reverse current variation of annealed device is higher than as-grown device, which is related to barrier height in the ZTO/SiC interface. It is shown that annealing process is possible to control the electrical characteristics of ZTO/SiC heterojunction diode.

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참고문헌

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