References
- B. Duriez et al., IEDM Tech. Dig., p. 522, 2013.
- J. Mitard et al., VLSI Symp. Tech. Dig., p. 138, 2014.
- M. Radosavljevic et al., IEDM Tech. Dig., p. 765, 2011.
- D. H. Kim et al., IEDM Tech. Dig., pp. 761, .2012.
- Kelin Kuhn, Peering into Moore's Crystal Ball: Transistor Scaling beyond the 15nm node, International symposium on advanced gate stack technology, 2010
- Jungwoo Oh, CMOS-compatible III-V/Ge Channels for High-Performance and Low-Power, Semicon Japan 2011
- M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M. T. Currie, and A. Lochtefeld, Strained Si, SiGe, and Ge channels for highmobility metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 97, 011101 (2005) https://doi.org/10.1063/1.1819976
- Silvia Fama, Lorenzo Colace, Gianlorenzo Masini, Gaetano Assanto and Hsin-Chiao Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys. Lett. 81, 586 (2002) https://doi.org/10.1063/1.1496492
- Hsin-Chiao Luan, Desmond R. Lim, Kevin K. Lee, Kevin M. Chen, Jessica G. Sandland, Kazumi Wada and Lionel C. Kimerling, High-quality Ge epilayers on Si with low threadingdislocation densities, Appl. Phys. Lett. 75, 2909 (1999) https://doi.org/10.1063/1.125187
- J. Bai, J.-S. Park, Z. Cheng, M. Curtin, B. Adekore, M. Carroll, A. Lochtefeld and M. Dudley, Study of the defect elimination mechanisms in aspect ratio trapping Ge growth, Appl. Phys. Lett. 90, 101902 (2007) https://doi.org/10.1063/1.2711276