센서학회지 (Journal of Sensor Science and Technology)

  • 제24권1호
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  • Pages.15-21
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  • 2015
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  • 1225-5475(pISSN)
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  • 2093-7563(eISSN)
한국센서학회 (The Korean Sensors Society)
권호 표지
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Electrical and Optical Properties of Asymmetric Dielectric/Metal/Dielectric (D/M/D) Multilayer Electrode Prepared by Radio-Frequency Sputtering for Solar Cells

  • Pandey, Rina (Interface Control Research Center, Korea Institute of Science and Technology (KIST)) ;
  • Lim, Ju Won (Interface Control Research Center, Korea Institute of Science and Technology (KIST)) ;
  • Lim, Keun Yong (Interface Control Research Center, Korea Institute of Science and Technology (KIST)) ;
  • Hwang, Do Kyung (Interface Control Research Center, Korea Institute of Science and Technology (KIST)) ;
  • Choi, Won Kook (Interface Control Research Center, Korea Institute of Science and Technology (KIST))
  • 투고 : 2014.12.19
  • 발행 : 2015.01.31
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초록

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

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