Abstract
This paper deals with the residual stresses developed in an epoxy film deposited on Si wafer. First, chemically induced residual stresses due to the volumetric shrinkage in cross-linking resins during polymerization are treated. The curvature measurement method is employed to investigate the residual stresses. Then, thermally induced stresses are investigated along the interface between the epoxy film and Si wafer. The boundary element method is employed to investigate the whole stresses in the film. The singular stress is observed near the interface corner. Such residual stresses are large enough to initiate interface delamination to relieve the residual stresses.