The Transactions of the Korean Institute of Power Electronics (전력전자학회논문지)

The Korean Institute of Power Electronics (전력전자학회)
권호 표지
DOI QR코드

DOI QR Code

Implementation and Problem Analysis of Phase Shifted dc-dc Full Bridge Converter with GaN HEMT

Cascode GaN HEMT를 적용한 위상 천이 dc-dc 컨버터의 구현 및 문제점 분석

  • Joo, Dong-Myoung (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Dong-Sik (Department of Electrical Engineering, Daejin University) ;
  • Lee, Byoung-Kuk (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Jong-Soo (Department of Electrical Engineering, Daejin University)
  • Received : 2015.09.07
  • Accepted : 2015.10.31
  • Published : 2015.12.20
Download PDF
⟨ Previous Next ⟩

Abstract

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

Keywords

References

  1. S. Y. Park, P. Sun, W. Yu, and J. S. Lai, "Performance evaluation of high voltage super junction MOSFETs for zero-voltage soft-switching inverter applications," IEEE Applied Power Electronics Conference and Exposition(APEC2010) , pp. 387-391, Feb. 21-25, 2010.
  2. J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, “Survey of wide bandgap power semiconductor devices,” IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2155-2163, 2014. https://doi.org/10.1109/TPEL.2013.2268900
  3. S. Ji, D. Reusch, and F. C. Lee, “High-frequency high power density 3-D integrated gallium-nitride-based point of load module design,” IEEE Trans. Power Electron., Vol. 28, No. 9, pp. 4216-4226, 2013. https://doi.org/10.1109/TPEL.2012.2235859
  4. D. Reusch and J. Strydom, “Understanding the effect of PCB layout on circuit performance in a high-frequency gallium-nitride-based point of load converter,” IEEE Trans. Power Electron., Vol. 29, No. 4, pp. 2008-2015, 2014. https://doi.org/10.1109/TPEL.2013.2266103
  5. X. Huang, Q. Li, Z. Liu, and F. C. Lee, "Analytical loss model of high voltage gaN HEMT in cascode configuration," IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2208-2219, 2014. https://doi.org/10.1109/TPEL.2013.2267804
  6. S. Abdel-Rahman, "Design of phase shifted full-bridge converter with current doubler rectifier," Infineon Technologies AG, DE, pp. 9, 2013.
  7. S. Madiwale, "Adaptive dead time in full bridge phase shifted topology using ADP1055," Analog Devices, MA, USA, pp. 3-5, 2014.
  8. A. Lidow and J. Strydom, "Gallium nitride (GaN) technology overview," Efficient Power Conversion Coporation, pp. 1-6, 2012.
  9. [ONLINE] Available at: http://www.semicon.panasonic.co.jp/en/products/powerics/ganpower/. [Accessed 22 May 2015].
  10. F. Bjoerk, J. Hancock, and G. Deboy, "How to make most beneficial use of the latest generation of super junction technology devices," Infineon Technologies AG, DE, pp. 9-10, 2007.
  11. ON Semiconductor, Appl, AN-1090/D, "Understanding and predicting power MOSFET switching behavior," pp. 1-4, 2002.

Cited by

  1. Design and Implementation of an Optimal Hardware for a Stable Operating of Wide Bandgap Devices vol.65, pp.1, 2016, https://doi.org/10.5370/KIEE.2016.65.1.88