한국전자통신학회논문지 (The Journal of the Korea institute of electronic communication sciences)

한국전자통신학회 (Korea Institute of Electronic Communication Science)
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3G, 4G LTE 환경에 적합한 0.11μm CMOS 저전력, 광대역의 저잡음증폭기 설계

0.11μm CMOS Low Power Broadband LNA design for 3G/4G LTE Environment

  • 투고 : 2014.07.28
  • 심사 : 2014.09.19
  • 발행 : 2014.09.30
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초록

3G부터 4G LTE까지의 전체 대역에 적용이 가능한 저전력, 광대역 저잡음증폭기를 설계하였다. 설계한 광대역 다중입력 저잡음증폭기는 기존의 3G인 CDMA의 대역인 1.2GHz대역과 LTE대역인 2.5GHz대역까지 넓은 주파수 대역을 안정적으로 증폭이 가능하고, 다중입력방식을 통해 입력신호의 크기에 관계없이 안정적인 증폭이 가능하도록 설계하였다. 설계된 저잡음증폭기는 1.2V의 공급전압에서 약 0.6mA의 전류를 소모하고, 이는 Cadence사의 컴퓨터 시뮬레이션을 통해 검증하였다. 낮은 입력신호에 대응한 증폭은 최대 20dB이고, 신호에 따라 최저 -10dB의 이득값을 얻을 수 있었다. 잡음특성(NF : Noise Figure)은 High Gain모드에서 15dB이하, Low Gain 모드에서 3dB이하를 가진다.

We present the Low Power Broadband Low noise amplifier(LNA) that can be applied a whole bandwidth from 3G to 4G LTE. This multi input LNA was designed to steadily amplify through a multi input method regardless the size of the input signal and operate on a wide range of frequency band from a standard 3G CDMA band 1.2GHz to LTE band 2.5GHz. The designed LNA consumes an average of 6mA on a 1.2V power supply and this was affirmed using computer simulation tests. The amplification which was corresponded to the lowest input signal is at a maximum of 20dB and was able to obtain the minimum value of the gain of -10dB. The Noise figure is less than 3dB at a High-gain mode and is less than 15dB at a Low-gain mode.

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참고문헌

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