Applied Chemistry for Engineering (공업화학)

The Korean Society of Industrial and Engineering Chemistry (한국공업화학회)
권호 표지
DOI QR코드

DOI QR Code

Study on Leaching Behavior for Recovery of Ga Metal from LED Scraps

LED 공정스크랩으로부터 Ga 회수를 위한 침출 거동 연구

  • Park, Kyung-Soo (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)) ;
  • Swain, Basudev (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)) ;
  • Kang, Lee Seung (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)) ;
  • Lee, Chan Gi (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)) ;
  • Uhm, Sunghyun (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)) ;
  • Hong, Hyun Seon (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE)) ;
  • Shim, Jong-Gil (Enco co. Ltd.) ;
  • Park, Jeung-Jin (Enco co. Ltd.)
  • Received : 2014.06.09
  • Accepted : 2014.06.26
  • Published : 2014.08.10
Download PDF
⟨ Previous Next ⟩

Abstract

LED scraps consisting of highly crystalline GaN and their leaching behavior are comprehensively investigated for hydro-metallurgical recovery of rare metals. Highly stable GaN renders the leaching of the LED scraps extremely difficult in ordinary acidic and basic media. More favorable state can be obtained by way of high temperature solid-gas reaction of GaN-$Na_2CO_3$ powder mixture, ball-milled thoroughly at room temperature and subsequently oxidized under ambient air environment at $1000-1200^{\circ}C$ in a horizontal tube furnace, where GaN was effectively oxidized into gallium oxides. Stoichiometry analysis reveals that GaN is completely transformed into gallium oxides with Ga contents of ~73 wt%. Accordingly, the oxidized powder can be suitably leached to ~96% efficiency in a boiling 4 M HCl solution, experimentally confirming the feasibility of Ga recycling system development.

습식제련 기술을 통한 Ga의 재활용을 위해 고결정성 GaN으로 구성되어 있는 LED 공정스크랩의 침출 거동을 연구하였다. 고결정성 GaN은 산성 및 염기성 조건에서 매우 안정하여 침출이 어려운 물질로 알려져 있다. 따라서, 본 연구에서는 볼밀링을 통해 원료와 $Na_2CO_3$를 1:1 비율로 섞은 후 관상로를 이용해 $1000-1200^{\circ}C$에서 열처리 하여 산화물로의 상변화를 유도하였다. 열처리 결과로써, $1100^{\circ}C$에서 GaN은 약 73 wt%의 Ga을 포함하는 산화물로 상변화 되었다. 이러한 열처리 샘플은 $100^{\circ}C$ 4 M HCl에서 96%의 높은 침출률을 나타냈다.

Keywords

References

  1. D. A. Kramer, Mineral Commodity Summary 2010: Gallium, United States Geological Survey (2012).
  2. J. J. Coleman, C. Jagadish, and C. Bryce, Advances in Semiconductor Lasers, Elsevier, 150-151 (2012).
  3. I. Repins, M. A. Contreras, B. Egaas, C. Dehart, J. Scharf, C. L. Perkins, B. To, and R. Noufi, 19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor, Prog. Photovoltaics, 16, 235-239 (2008). https://doi.org/10.1002/pip.822
  4. J. S. Lee, S. Chang, S. M. Koo, and S. Y. Lee, High-Performance a-IGZO TFT With Gate Dielectric Fabricated at Room Temperature, IEEE Electron Device Lett., 31, 225-227 (2010). https://doi.org/10.1109/LED.2009.2038806
  5. J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors, IEEE Photonics Technol. Lett., 15, 18-20 (2003). https://doi.org/10.1109/LPT.2002.805852
  6. D. H. Kim, C. O. Cho, Y. G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q. H. Park, Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns, Appl. Phys. Lett., 87, 203-508 (2005).
  7. A. Dadgar, C. Hums, A. Diez, J. Blasing, and A. Krost, Growth of blue GaN LED structures on 150-mm Si(111), J. Cryst. Growth, 297, 279-282 (2006). https://doi.org/10.1016/j.jcrysgro.2006.09.032
  8. Z. Fang and H. D. Gesser, Recovery of gallium from coal fly ash, Hydrometallurgy, 41, 187-200 (1996). https://doi.org/10.1016/0304-386X(95)00055-L
  9. K. Xu, T. Deng, J. Liu, and W. Peng, Study on the recovery of gallium from phosphorous flue dust by leaching with spent sulfuric acid solution and precipitation, Hydrometallurgy, 86, 172-177 (2007). https://doi.org/10.1016/j.hydromet.2006.11.013
  10. J. S. Lee, K. Park, S. Nahm, S. W. Kim, and S. Kim, $Ga_2O_3$ nanomaterials synthesized from ball-milled GaN powders, J. Cryst. Growth, 244, 287-295 (2002). https://doi.org/10.1016/S0022-0248(02)01656-1
  11. A. K. N. Swamy, E. Shafirovich, and C. V. Ramana, Synthesis of one-dimensional $Ga_2O_3$ nanostructures via high-energy ball milling and annealing of GaN, Ceram. Int., 39, 7223-7227 (2013). https://doi.org/10.1016/j.ceramint.2013.01.043

Cited by

  1. Influence of Oxidation Temperatures on the Structure and the Microstructure of GaN MOCVD Scraps vol.22, pp.4, 2015, https://doi.org/10.4150/KPMI.2015.22.4.278
  2. Selective Solvent Extraction of In from Synthesis Solution of MOCVD Dust using D2EHPA vol.24, pp.5, 2015, https://doi.org/10.7844/kirr.2015.24.5.80
  3. P형 GaN 중간층이 삽입된 녹색 발광다이오드 특성 평가 vol.54, pp.2, 2014, https://doi.org/10.9713/kcer.2016.54.2.274