Transactions on Electrical and Electronic Materials

  • 제15권2호
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  • Pages.73-76
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  • 2014
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Effect of Annealing Atmosphere on the La2O3 Nanocrystallite Based Charge Trap Memory

  • Tang, Zhenjie (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Zhao, Dongqiu (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Hu, Huiping (College of Physics and Electronic Engineering, Anyang Normal University) ;
  • Li, Rong (School of Mathematics and Statistics, Anyang Normal University) ;
  • Yin, Jiang (Department of Materials Science and Engineering, National Laboratory of Solid State Microstructures, Nanjing University)
  • 투고 : 2014.02.07
  • 심사 : 2014.03.04
  • 발행 : 2014.04.25
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초록

$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.

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