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Rapid and Accurate Measurement of Diffusion Length of Minority Carriers of CIGS Solar Cells

CIGS 태양전지의 소수캐리어 확산 거리에 대한 새로운 측정 방안 연구

  • Lee, Don Hwan (PV Development, ES Business Division, Samsung SDI) ;
  • Kim, Young Su (PV Development, ES Business Division, Samsung SDI) ;
  • Mo, Chan Bin (PV Development, ES Business Division, Samsung SDI) ;
  • Nam, Jung Gyu (PV Development, ES Business Division, Samsung SDI) ;
  • Lee, Dong Ho (PV Development, ES Business Division, Samsung SDI) ;
  • Park, Sung Chan (PV Development, ES Business Division, Samsung SDI) ;
  • Kim, Byoung June (PV Development, ES Business Division, Samsung SDI) ;
  • Kim, Dong Seop (PV Development, ES Business Division, Samsung SDI)
  • 이돈환 (삼성SDI ES사업부 PV 제품개발그룹) ;
  • 김영수 (삼성SDI ES사업부 PV 제품개발그룹) ;
  • 모찬빈 (삼성SDI ES사업부 PV 제품개발그룹) ;
  • 남정규 (삼성SDI ES사업부 PV 제품개발그룹) ;
  • 이동호 (삼성SDI ES사업부 PV 제품개발그룹) ;
  • 박성찬 (삼성SDI ES사업부 PV 제품개발그룹) ;
  • 김병준 (삼성SDI ES사업부 PV 제품개발그룹) ;
  • 김동섭 (삼성SDI ES사업부 PV 제품개발그룹)
  • Received : 2014.05.30
  • Accepted : 2014.06.02
  • Published : 2014.06.30

Abstract

Minority carrier diffusion length is one of the most important parameters of solar cells, especially for short circuit current density (Jsc). In this report, we proposed the calculating method of the minority carrier diffusion length ($L_n$) in CIGS solar cells through biased quantum efficiency (QE). To verify this method's reliability, we chose two CIGS samples which have different grain size and calculated $L_n$ for each sample. First of all, we calculated out that $L_n$ was 56nm and 97nm for small and large grain sized-cell through this method, respectively. Second, we found out the large grain sized-cell has about 7 times lower defect density than the small grain sized-cell using drive level capacitance profiling (DLCP) method. Consequently, we confirmed that $L_n$ was mainly affected by the micro-structure and defect density of CIGS layer, and could explain the cause of Jsc difference between two samples having same band gap.

Keywords