JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지
DOI QR코드

DOI QR Code

Blistering Induced Degradation of Thermal Stability Al2O3 Passivation Layer in Crystal Si Solar Cells

  • Received : 2013.08.25
  • Accepted : 2013.12.30
  • Published : 2014.02.28
Download PDF
⟨ Previous Next ⟩

Abstract

Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.

Keywords

References

  1. D. S. Kil, S. J. Yeon, K. Hong, J. S. Roh, H. C. Sohn, J. W. Kim, and S. W. Park, "Theoretical Calculation and Experimental Verification of the Hf/Al Concentration Ratio in Nano-mixed $Hf_xAl_yO_z$ Films Prepared by Atomic Layer Deposition," Journal of Semiconductor Technology and Science, Vol. 5, No. 2, pp. 120 - 126, June, 2005.
  2. G. Dingemans, P. Engelhart, R. Seguin, F. Einsele, B. Hoex, M. C. M. van de Sanden, and W. M. M. Kessels, "Stability of $Al_2O_3$ and $Al_2O_3$ /a-SiNx:H stacks for surface passivation of crystalline silicon," Journal of Applied Physics, Vol. 106, No. 11, pp. 114907, Dec, 2009. https://doi.org/10.1063/1.3264572
  3. Florian Werner, Boris Veith, Veronica Tiba, Paul Poodt, Fred Roozeboom, Rolf Brendel, and Jan Schmidt, "Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide," Applied Physics Letters, Vol. 97, No. 16, pp. 162103, Oct, 2010. https://doi.org/10.1063/1.3505311
  4. B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels, " On the c-Si surface passivation mechanism by the negative-chargedielectric $Al_2O_3$ ," Journal of Applied Physics, Vol. 104, No. 11, pp. 113703, Dec, 2008. https://doi.org/10.1063/1.3021091
  5. Dong Lei, Xuegong Yu, Lihui Song, Xin Gu, Genhu Li, and Deren Yang, "Modulation of atomic-layer-deposited $Al_2O_3$ film passivation of silicon surface by rapid thermal processing," Applied Physics Letters, Vol. 99, No. 05, pp. 052103, Aug, 2011. https://doi.org/10.1063/1.3616145
  6. G. Dingemans, N. M. Terlinden, M. A. Verheijen, M. C. M. van de Sanden, and W. M. M. Kessels, "Controlling the fixed charge and passivation properties of Si(100)/$Al_2O_3$ interfaces using ultrathin $SiO_2$ interlayers synthesized by atomic layer deposition," Journal of Applied Physics, Vol. 110, No. 09, pp. 093715, Nov, 2011. https://doi.org/10.1063/1.3658246
  7. K. Y. Park, H. I. Cho, E. J. Lee, S. H. Hahm and J. H. Lee, "Device Characteristics of AlGaN/GaN MIS-HFET using $Al_2O_3$ Based High-k Dielectric," Journal of Semiconductor Technology and Science, Vol. 5, No. 2, pp. 107 - 112, June, 2005.
  8. G. Dingemans, F. Einsele, W. Beyer, M. C. M. van de Sanden, and W. M. M. Kessels, "Influence of annealing and $Al_2O_3$ properties on the hydrogeninduced passivation of the Si/$SiO_2$ interface," Journal of Applied Physics, Vol. 111, No. 09, pp. 093713, May, 2012. https://doi.org/10.1063/1.4709729
  9. E. Simoen, A. Rothschild, B. Vermang, J. Poortmans, and R. Mertens, "Impact of Forming Gas Annealing and Firing on the $Al_2O_3$ /p-Si Interface State Spectrum," Electrochemical and Solid-State Letters, Vol. 14, No. 9, pp. H362-H364, June, 2011. https://doi.org/10.1149/1.3597661
  10. G. Dingemans, W. Beyer, M. C. M. van de Sanden, and W. M. M. Kessels, "Hydrogen induced passivation of Si interfaces by $Al_2O_3$ films and $SiO_2$/$Al_2O_3$ stacks," Applied Physics Letters, Vol. 97, No. 15, pp. 152106, Oct, 2010. https://doi.org/10.1063/1.3497014
  11. G. Dingemans, M. C. M. van de Sanden, and W. M. M. Kessels, "Influence of the Deposition Temperature on the c-Si surface Passivation by $Al_2O_3$ Films Synthesized by ALD and PECVD," Electrochemical and Solid-State Letters, Vol. 13, No. 3, pp. H76-H79, Dec, 2010. https://doi.org/10.1149/1.3276040
  12. Kunihiko Iwamoto, Kuuichi Kamimuta, Arito Ogawa, Yukimune Watanabe, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Masashi Takahashi, Hiroyuki Ota, Toshihide Nabatame, and Akira Toriumi, "Experimental evidence for the flatband voltage shift of high-k metal-oxidesemiconductor devices due to the dipole formation at the high-k/$SiO_2$ interface," Applied Physics Letters, Vol. 92, No. 13, pp. 132907, April, 2008. https://doi.org/10.1063/1.2904650
  13. D. Schuldis, A. Richter, J. Benick, and M. Hermle, "Influence of different post deposition treatments on the passivation quality and interface properties of thermal ALD $Al_2O_3$ capped PECVD SiNx," The 27th European PV Solar Energy Conference and Exhibition, pp. 24-28, Sep, 2012, Frankfurt, Germany.
  14. Byungha Shin, Justin R. Weber, Rathnait D. Long, Paul K. Hurley, Chris G. Van de Walle, and Paul C. Mclntyre, "Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates," Applied Physics Letters, Vol. 96, No. 15, pp. 152908, April, 2010. https://doi.org/10.1063/1.3399776
  15. A. W. Stephens, A. G. Aberle, and M. A. Green, "Surface recombination velocity measurements at the silicon-silicon dioxide interface by microwavedetected photoconductance decay," Journal of Applied Physics, Vol. 76, No. 1, pp. 363 - 370, Jul, 1994. https://doi.org/10.1063/1.357082
  16. P. Saint-Cast, D. Kania, M. Hofmann, J. Benick, J. Rentsch, and R. Preu, "Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide," Applied Physics Letters, Vol. 95, No. 15, pp. 151502 - 151502-3, Oct, 2009. https://doi.org/10.1063/1.3250157

Cited by

  1. Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack vol.67, pp.6, 2015, https://doi.org/10.3938/jkps.67.995
  2. Understanding Surface Treatment and ALD AlOx Thickness Induced Surface Passivation Quality of c-Si Cz Wafers vol.7, pp.5, 2017, https://doi.org/10.1109/JPHOTOV.2017.2717040
  3. for the improvement of the structural quality of AlN grown on sapphire substrate by MOVPE vol.214, pp.2, 2016, https://doi.org/10.1002/pssa.201600727