한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제27권2호
  • /
  • Pages.76-80
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  • 2014
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Phase Change Memory와 Capacitor-Less DRAM을 사용한 Unified Dual-Gate Phase Change RAM

Unified Dual-Gate Phase Change RAM (PCRAM) with Phase Change Memory and Capacitor-Less DRAM

  • 김주연 (울산과학대학교 전기전자공학부)
  • Kim, Jooyeon (Faculty of Electrical & Electronic Engineering, Ulsan College)
  • 투고 : 2014.01.07
  • 심사 : 2014.01.24
  • 발행 : 2014.02.01
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초록

Dual-gate PCRAM which unify capacitor-less DRAM and NVM using a PCM instead of a typical SONOS flash memory is proposed as 1 transistor. $VO_2$ changes its phase between insulator and metal states by temperature and field. The front-gate and back-gate control NVM and DRAM, respectively. The feasibility of URAM is investigated through simulation using c-interpreter and finite element analysis. Threshold voltage of NVM is 0.5 V that is based on measured results from previous fabricated 1TPCM with $VO_2$. Current sensing margin of DRAM is 3 ${\mu}A$. PCM does not interfere with DRAM in the memory characteristics unlike SONOS NVM. This novel unified dual-gate PCRAM reported in this work has 1 transistor, a low RESET/SET voltage, a fast write/erase time and a small cell so that it could be suitable for future production of URAM.

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참고문헌

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