JSTS:Journal of Semiconductor Technology and Science

  • 제13권4호
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  • Pages.410-414
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  • 2013
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Development of sacrificial layer wet etch process of TiNi for nano-electro-mechanical device application

  • Park, Byung Kyu (Department of Electronic Engineering, Myongji University) ;
  • Choi, Woo Young (Department of Electronic Engineering, Sogang University) ;
  • Cho, Eou Sik (Department of Electronic Engineering, Gachon University) ;
  • Cho, Il Hwan (Department of Electronic Engineering, Myongji University)
  • 투고 : 2013.03.11
  • 심사 : 2013.05.10
  • 발행 : 2013.08.31
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초록

We report the wet etching of titanium nickel (TiNi) films for the production of nano-electro-mechanical (NEM) device. $SiO_2$ and $Si_3N_4$ have been selected as sacrificial layers of TiNi metal and etched with polyethylene glycol and hydrofluoric acid (HF) mixed solution. Volume percentage of HF are varied from 10% to 35% and the etch rate of the $SiO_2$, $Si_3N_4$ and TiNi are reported here. Within the various experiment results, 15% HF mixed polyethylene glycol solution show highest etch ratio between sacrificial layer and TiNi metal. Especially $Si_3N_4$ films shows high etch ratio with TiNi films. Wet etching results are measured with SEM inspection. Therefore, this experiment provides a novel method for TiNi in the nano-electro-mechanical device.

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참고문헌

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