Journal of electromagnetic engineering and science

  • 제13권2호
  • /
  • Pages.127-133
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  • 2013
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  • 2671-7255(pISSN)
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  • 2671-7263(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
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Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors

  • Ko, Pil-Seok (Division of Electronics and Electrical Engineering, Dongguk University) ;
  • Park, Hyung-Moo (Division of Electronics and Electrical Engineering, Dongguk University)
  • 투고 : 2013.04.23
  • 심사 : 2013.05.30
  • 발행 : 2013.06.30
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초록

We examined the scaling effects of a number of gate_fingers (N) and gate_widths (w) on the high-frequency characteristics of $0.1-{\mu}m$ metamorphic high-electron-mobility transistors. Functional relationships of the extracted small-signal parameters with total gate widths ($w_t$) of different N were proposed. The cut-off frequency ($f_T$) showed an almost independent relationship with $w_t$; however, the maximum frequency of oscillation ($f_{max}$) exhibited a strong functional relationship of gate-resistance ($R_g$) influenced by both N and $w_t$. A greater $w_t$ produced a higher $f_{max}$; but, to maximize $f_{max}$ at a given $w_t$, to increase N was more efficient than to increase the single gate_width.

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참고문헌

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