Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si

  • Park, Taehee (Department of Chemistry and Research Institute for Natural Science, Hanyang University) ;
  • Park, Eunkyung (Department of Chemistry and Research Institute for Natural Science, Hanyang University) ;
  • Ahn, Juwon (Department of Chemistry and Research Institute for Natural Science, Hanyang University) ;
  • Lee, Jungwoo (Department of Chemistry and Research Institute for Natural Science, Hanyang University) ;
  • Lee, Jongtaek (Department of Chemistry and Research Institute for Natural Science, Hanyang University) ;
  • Lee, Sang-Hwa (Department of Physics, Hanyang University) ;
  • Kim, Jae-Yong (Department of Physics, Hanyang University) ;
  • Yi, Whikun (Department of Chemistry and Research Institute for Natural Science, Hanyang University)
  • Received : 2013.01.29
  • Accepted : 2013.03.20
  • Published : 2013.06.20
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Abstract

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

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References

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