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Effect of Temperature on the Characteristics of ZnO Thin Film Applied to the Window Layer of CIGS Solar Cells

CIGS 태양전지의 윈도우 층에 적용되는 ZnO 박막 특성에 관한 온도의 영향

  • Jung, Kyung Seo (Department of Electronics Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronics Engineering, Gachon University) ;
  • Cho, Eou Sik (Department of Electronics Engineering, Gachon University)
  • Received : 2012.11.14
  • Accepted : 2013.03.21
  • Published : 2013.04.01

Abstract

For the application to the window layer of $Cu(In,Ga)Se_2$(CIGS) solar cell, zinc oxide(ZnO) thin film was deposited at various temperatures by in-line pulsed DC sputtering. From the structural, optical, and electrical investigation and analysis, it was possible to obtain the lower thickness, the lower resistivity, and the higher transmittance at a higher process temperature. The energy band gap of ZnO was calculated using the transmittance data and was analyzed in terms of the dependency on temperature. From the X-ray diffraction(XRD) results, it was possible to conclude that a dominant peak was found about $34.2{\sim}34.6^{\circ}$(111) and crystallinity was obtained at a temperature above $150^{\circ}C$.

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References

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