Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Charaterization of Oxide Thin Film Transistor

산화물반도체 박막트랜지스터 제작 및 전기적 특성 분석

  • Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
  • 이상렬 (청주대학교 반도체공학과)
  • Received : 2013.03.13
  • Accepted : 2013.03.24
  • Published : 2013.04.01
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Abstract

Thin-film transistors(TFTs) with silicon zinc tin oxide(SZTO) channel layer are fabricated by solution-process. The threshold voltage ($V_{th}$) shifted toward positive directly with increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy (VO). As a result, the Si act as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller.

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References

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