Current Photovoltaic Research
- Volume 1 Issue 2
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- Pages.115-121
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- 2013
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- 2288-3274(pISSN)
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- 2508-125X(eISSN)
DOI QR Code
Preparation of Intrinsic ZnO Films at Low Temperature Using Oxidation of ZnS Precursor and Characterizion of the Films
- Park, Do Hyung (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Cho, Yang Hwi (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Shin, Dong Hyeop (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Ahn, Byung Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
- Received : 2013.11.29
- Accepted : 2013.12.09
- Published : 2013.12.31
Abstract
ZnO film has been used for CIGS solar cells as a buffer layer as itself or by doping Mg and Sn; ZnO film also has been used as a transparent conducting layer by doping Al or B for solar cells. Since ZnO itself is a host material for many applications it is necessary to understand the electrical and optical properties of ZnO film itself with various preparation conditions. We prepared ZnO films by converting ZnS precursor into ZnO film by thermal annealing. ZnO film was formed at low temperature as low as