JSTS:Journal of Semiconductor Technology and Science

  • 제13권1호
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  • Pages.1-7
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  • 2013
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Sensitivity Alterable Biosensor Based on Gated Lateral BJT for CRP Detection

  • Yuan, Heng (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kang, Byoung-Ho (Center for Functional Devices Fusion Platform, Kyungpook National University) ;
  • Lee, Jae-Sung (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Jeong, Hyun-Min (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Yeom, Se-Hyuk (Center for Functional Devices Fusion Platform, Kyungpook National University) ;
  • Kim, Kyu-Jin (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kwon, Dae-Hyuk (Department of Electronic Engineering, Kyungil University) ;
  • Kang, Shin-Won (School of Electronics Engineering, College of IT Engineering, Kyungpook National University)
  • 투고 : 2012.04.23
  • 발행 : 2013.02.28
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초록

In this paper, a biosensor based on a gated lateral bipolar junction transistor (BJT) is proposed. The gated lateral BJT can function as both a metal-oxide-semiconductor field-effect transistor (MOSFET) and a BJT. By using the self-assembled monolayer (SAM) method, the C-reactive protein antibodies were immobilized on the floating gate of the device as the sensing membrane. Through the experiments, the characteristics of the biosensor were analyzed in this study. According to the results, it is indicated that the gated lateral BJT device can be successfully applied as a biosensor. Additionally, we found that the sensitivity of the gated lateral BJT can be varied by adjusting the emitter (source) bias.

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참고문헌

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피인용 문헌

  1. Easy-to-Fabricate and High-Sensitivity LSPR Type Specific Protein Detection Sensor Using AAO Nano-Pore Size Control vol.17, pp.4, 2017, https://doi.org/10.3390/s17040856
  2. Ion-Sensitive Gated Lateral Bipolar Junction Transistor vol.32, pp.2, 2015, https://doi.org/10.1088/0256-307X/32/2/020701