참고문헌
- R. F. Davis, G. Kelner, M.Shur, J. W. Pamour, J. A. Edmond, "Thin film deposition and microelectronics and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide", Proceedings of the IEEE, vol. 79, no. 5, pp. 677-701, May. 1991. https://doi.org/10.1109/5.90132
- J. M. Bluet, D. Zianea, G. Guillot, D. Tournier b, P. Brosselardc, J. Monserrat, P. Godignonc, " Barrier height homogeneity for 4.5 kV 4H-SiC Schottky rectifier", Superlattices and Microstructures, vol. 40, no. 10, pp. 399-404, Oct. 2006. https://doi.org/10.1016/j.spmi.2006.06.012
- T. Nakamura, Y. Nakano, M. Aketa, R. Nakamura, S.Mitani, H. Sakairi, Y. Yokotsuji, "High Performance SiC Trench Devices with Ultra-low Ron", Electron Device Meeting (IEDM), pp. 26.5.1-26.5.3, Dec. 2011.
- B. J. Baliga, "The pinch rectifier: A low-forward-drop high-speed power diode", IEEE Electron Device Lett., vol. EDL-5, pp. 194-196, June. 1984.
- S. Kunori, J. Ishida, M. Tanaka, M. Wakatabe, T. Kan, "The low power dissipation Schottky barrier diode with trench structure", in Proc. 1992 Int. Symp. Power Semiconductor Devices & IC's, Tokyo, Japan, pp. 66-71.
- M. Mehrotra, B. J. Baliga, "Trench MOS barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plane breakdown voltage," Solid-State Electron., vol. 38, no. 4, pp. 801-806, April. 1995. https://doi.org/10.1016/0038-1101(94)00166-D
- K. J. Schoen, J. P. Henning, J. M. Woodall, J. A. Cooper Jr., M. R. Melloch, "A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H-SiC", IEEE Electron Device Lett., vol. 19, no. 4, pp. 97-99, April. 1998. https://doi.org/10.1109/55.663526
- B. J. Baliga, "Trends in power semiconductor devices", IEEE Trans. Electron Devices, vol. 43, pp. 1717-1731, Oct. 1996. https://doi.org/10.1109/16.536818
- W. Y. Li, G. P. Ru, Y. L. Jiang, R. Gang, "Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics", Chin. Phys. B, vol. 20, pp. 087304-1-087304-8, April 2011. https://doi.org/10.1088/1674-1056/20/8/087304
- J. W. Moon, Y. I. Choi, S. K. Chung, "Modified Trench MOS Barrier Schottky(TMBS)Rectifier", KIEE International transaction on Electrophysics and Applications, vol 5-C, no. 2, pp. 58-62, March. 2005.
피인용 문헌
- 낮은 순방향 전압 강하를 갖는 4H-SiC Trench-type Accumulation Super Barrier Rectifier(TASBR) vol.21, pp.1, 2013, https://doi.org/10.7471/ikeee.2017.21.1.73