JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지
DOI QR코드

DOI QR Code

Dependence of the 1/f Noise Characteristics of CMOSFETs on Body Bias in Sub-threshold and Strong Inversion Regions

  • Kwon, Sung-Kyu (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kwon, Hyuk-Min (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kwak, Ho-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Jang, Jae-Hyung (Dept. of Electronics Engineering, Chungnam National University) ;
  • Shin, Jong-Kwan (Dept. of Electronics Engineering, Chungnam National University) ;
  • Hwang, Seon-Man (Dept. of Electronics Engineering, Chungnam National University) ;
  • Sung, Seung-Yong (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee, Song-Jae (Dept. of Electronics Engineering, Chungnam National University) ;
  • Han, In-Shik (Magnachip Semiconductor) ;
  • Chung, Yi-Sun (Magnachip Semiconductor) ;
  • Lee, Jung-Hwan (Magnachip Semiconductor) ;
  • Lee, Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
  • Received : 2013.06.20
  • Accepted : 2013.10.16
  • Published : 2013.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, $S_{ID}/I_D{^2}$ showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of $S_{ID}/I_D{^2}$ on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.

Keywords

References

  1. J.W. Wu, J.W. You, H.C. Ma, C.C. Cheng, C.F. Hsu, G.W. Huang, C.S. Chang and Tahui Wang, "Low Frequency Noise Degradation In Ultra-Thin Oxide(15A)Analog n-MOSFETs Resulting From Valence-Band Tunneling," Proceedings. IEEE International Reliability Physics Symposium, pp. 260-264, Apr. 2005.
  2. H.M. Kwon, J.D. Bok, I.S. Han, S.U. Park, Y.J. Jung, J.H. Jang, S.Y. Ko, W.M. Lee, G.W. Lee and H.D. Lee, "Dependence of hot carrier reliability and low frequency noise on channel stress in nanoscale n-channel metal-oxide-semiconductor fieldeffect- transistors," Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PB01(1-5), Oct. 2011. https://doi.org/10.7567/JJAP.50.10PB01
  3. I.S. Han, H.M. Kwon, J.D. Bok, S.K. Kwon, Y.J. Jung, W.I. Choi, D.S. Choi, G. Lim, Y.S. Chung, J.H. Lee, G.W. Lee and H.D. Lee, "Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p- Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Nitrided Gate Oxide," Japanese Journal of Applied Physiscs, Vol.50, No.10, pp.10PB03(1-4), Oct. 2011. https://doi.org/10.7567/JJAP.50.10PB03
  4. J.H. Lee, S.Y. Kim, I. H. Cho, S. B. Hwang and J.H. Lee, "1/f noise Characteristics of Sub-100nm MOS Transistors," Journal of Semiconducor Technology and Science, Vol. 6, No.1, pp.38-42, Mar., 2006.
  5. Y.A. Allogo, M. Marin, M. de Murcia, P. Linares and D. Cottin, "1/f noise in 0.18um technology n- MOSFETs from Subthreshold to saturation," Solid- State Electronics, Vol.46, No.7, pp.977-983, Jul., 2002. https://doi.org/10.1016/S0038-1101(02)00029-1
  6. M.J. Deen, and O. Marinov, "Effect of forward and reverse substrate biasing on low-frequency noise in silicon PMOSFETs," IEEE Transactions on Electron Devices, Vol.49, No.3, 409-413, Mar., 2002. https://doi.org/10.1109/16.987110
  7. G. Reimbold, "Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states," Electron Devices, IEEE Transactions on, Vol.31, No.9, pp.1190-1198, Sep. 1984. https://doi.org/10.1109/T-ED.1984.21687
  8. N.K. Park and K.O. Kenneth, "Body bias dependence of 1/f noise in NMOS transistors from deep-subthreshold to strong inversion," IEEE Transactions on Electron Devices, Vol.48, No.5, pp.999-1001, May. 2001. https://doi.org/10.1109/16.918249
  9. S. K. Kwon, H.Y. Kwak, H.M. Kwon, J.H. Jang, Y.J. Jung, S.S. Kim, D.S. Lee, J.K. Lee, S.J. Lee, and H.D. Lee, "Dependence of 1/f noise characteristics of NMOSFETs on body bias and temperature in sub-threshold region," Symposium on International Semiconductor Device Research (ISDRS), pp.1-2, Dec. 2011.
  10. L. K. J. Vandamme, X. Li and D. Rigaud, "1/f noise in MOS devices, mobility or number fluctuations?," IEEE Transactions on Electron Devices, Vol.41, No.11, pp.1936-1945, Nov. 1994. https://doi.org/10.1109/16.333809
  11. G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra and J. Brini, "Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors," Physica Status Solidi (a), Vol. 124, No.2, pp.571- 581, Apr. 1991. https://doi.org/10.1002/pssa.2211240225