참고문헌
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피인용 문헌
- Investigation on TG n-FinFET Parameters by Varying Channel Doping Concentration and Gate Length vol.9, pp.6, 2017, https://doi.org/10.1007/s12633-016-9528-3
- 3-D Simulation of Nanoscale SOI n-FinFET at a Gate Length of 8 nm Using ATLAS SILVACO vol.16, pp.3, 2015, https://doi.org/10.4313/TEEM.2015.16.3.156
- Electrical Characteristics of 8-nm SOI n-FinFETs vol.8, pp.4, 2016, https://doi.org/10.1007/s12633-016-9428-6