Advances in materials Research

  • 제1권1호
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  • Pages.37-49
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  • 2012
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  • 2234-0912(pISSN)
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  • 2234-179X(eISSN)
테크노프레스 (Techno-Press)
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Characterization of high performance CNT-based TSV for high-frequency RF applications

  • 투고 : 2011.11.12
  • 심사 : 2012.02.28
  • 발행 : 2012.03.25
⟨ 이전 논문 다음 논문 ⟩

초록

In this paper, we present modeling and characterization of CNT-based TSVs to be used in high-frequency RF applications. We have developed an integrated model of CNT-based TSVs by incorporating the quantum confinement effects of CNTs with the kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as a monolithic microwave capacitor with the resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine the optimized configuration for CNT-based TSVs for high frequency RF applications.

키워드

참고문헌

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피인용 문헌

  1. Improvement of electrical properties of through silicon vias metal interconnector by adding single-walled nanotubes vol.54, pp.6S1, 2015, https://doi.org/10.7567/JJAP.54.06FF12
  2. Modeling and Fabrication Aspects of Cu- and Carbon Nanotube-Based Through-Silicon Vias vol.67, pp.3, 2021, https://doi.org/10.1080/03772063.2018.1553638