JSTS:Journal of Semiconductor Technology and Science

  • 제12권1호
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  • Pages.59-65
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  • 2012
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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A Study on the Electrical Characteristic Analysis of c-Si Solar Cell Diodes

  • Choi, Pyung-Ho (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Hyo-Jung (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Baek, Do-Hyun (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Choi, Byoung-Deog (School of Information and Communication Engineering, Sungkyunkwan University)
  • 투고 : 2011.09.09
  • 발행 : 2012.03.31
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초록

A study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V) measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR) and Quasi-Neutral Region (QNR) of 3.02 and 1.76, respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination, dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device's front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz, we confirmed that the value of built-in potential is 0.63 V.

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참고문헌

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