한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권2호
  • /
  • Pages.96-99
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  • 2012
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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채널 구조에 따른 1T-DRAM Cell의 메모리 특성

Memory Characteristics of 1T-DRAM Cell by Channel Structure

  • 장기현 (광운대학교 전자재료공학과) ;
  • 정승민 (광운대학교 전자재료공학과) ;
  • 박진권 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Jang, Ki-Hyun (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Jung, Seung-Min (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Park, Jin-Kwon (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2012.01.19
  • 심사 : 2012.01.24
  • 발행 : 2012.02.01
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초록

We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.

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참고문헌

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