Transactions on Electrical and Electronic Materials

  • 제12권5호
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  • Pages.193-196
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  • 2011
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Fabrication and Electrical Properties of PZT/BFO Multilayer Thin Films

  • Jo, Seo-Hyeon (Dept. of Ceramic Engineering, Engineering Research Institute, Gyeongsang National University) ;
  • Nam, Sung-Pil (Dept. of Ceramic Engineering, Engineering Research Institute, Gyeongsang National University) ;
  • Lee, Sung-Gap (Dept. of Ceramic Engineering, Engineering Research Institute, Gyeongsang National University) ;
  • Lee, Seung-Hwan (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Lee, Young-Hie (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Kim, Young-Gon (Department of Photoelectronics Information, Chosun University College of Science and Technology)
  • 투고 : 2011.04.15
  • 심사 : 2011.06.14
  • 발행 : 2011.10.25
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초록

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

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참고문헌

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