참고문헌
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Bok-Hyung Lee, Dong-Hoon Shin, Sam-Dong Kim and Jin-Koo Rhee, "High Maximum Frequency of Oscillation of 0.1
$\mu$ m Off-set$\Gamma$ -Shaped gate InGaAs/InAlAs/GaAs metamorphic HEMTs," J. Korean Phys. Soc., vol. 43 no. 3 pp. 427-430, Sep. 2003. - ISE-DESSIS manual, pp. 12-288, Ver. 9.5
- Pallab Bhattacharya, Properties of Lattice-Matched and Strained Indium Gallium Arsenide, INSPEC, pp. 84-218, 1993.
- Sadao Adachi, Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP, Wiley Interscience, pp. 75-262, 1992.
- Frank Schwierz, Juin J. Liou, Modern Microwave Transistors: Theory, Design, and Performance, Wiley Interscience, pp. 19-291, 2003.
- T. Suemitsu, T. Enoki, N. Sano, M. Tomizawa, Y. Ishii, "An Analysis of the Kink Phenomena in InAlAs/InGaAs HEMT's Using Two-Dimensional Device Simulation," IEEE Trans. Electron Devices, vol. 45, no. 12, pp. 2390-2399, Dec. 1998. https://doi.org/10.1109/16.735714
- G. Meneghesso, and E. Zanoni, "Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors," Microelectronics Reliability, vol. 42, pp. 685-708, 2002. https://doi.org/10.1016/S0026-2714(02)00045-8
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Myung-Sik Son, Bok-Hyung Lee, Mi-Ra Kim, Sam- Dong Kim, and Jin-Koo Rhee, "Simulation of the DC and Millimeter-wave Characteristics of 0.1-um Offset T-shaped Gate
$In_xGa_{1-x}As$ /$In_{0.52}Al_{0.48}As$ / GaAs MHEMTs with Various$In_xGa_{1-x}As$ Channels,"J. Korean Phys. Soc., vol. 44, no.2, pp. 408-417, Feb. 2004. - T. Suemitsu, T. Enoki, and Y. Ishii, "Body contacts in InP-based InAlAs/InGaAs HEMTs and their effects on breakdown voltage and kink suppression," Electronics Letters, vol. 31, no. 9, pp. 758-759, April 1995. https://doi.org/10.1049/el:19950496
- XTEM data taken from MINT research center, Dong-guk University, Korea
- B. Brar, and H. Kroemer, "Influence of impact ionization on the Drain Conductance in InAs-AlSb Quantum Well Heterostructure Field-Effect Transistors," IEEE Trans. Electron Device Lett., vol. 16, no. 12, pp. 548-550, Dec. 1995. https://doi.org/10.1109/55.475583