한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권9호
  • /
  • Pages.697-700
  • /
  • 2011
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

용액공정을 이용한 ZnSnO 산화물 반도체 박막 트랜지스터에서 Mg 첨가에 따른 영향

Electrical Properties of Mg Doped ZnSnO TFTs Fabricated by Solution-process

  • 최준영 (한국과학기술연구원 전자재료연구센터) ;
  • 박기호 (한국과학기술연구원 전자재료연구센터) ;
  • 김상식 (고려대학교 나노반도체공학과) ;
  • 이상렬 (한국과학기술연구원 전자재료연구센터)
  • Choi, Jun-Young (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Park, Ki-Ho (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Kim, Sang-Sig (Semiconductor Engineering, University of Korea) ;
  • Lee, Sang-Yeol (Electronic Materials Center, Korea Institute of Science and Technology)
  • 투고 : 2011.07.26
  • 심사 : 2011.08.24
  • 발행 : 2011.09.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Thin-film transistors(TFTs) with magnesium zinc tin oxide(MZTO) channel layer are fabricated by solution-process. The threshold voltage (Vth) shifted toward positive directly with increasing Mg contents in MZTO system. Because the Mg has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy ($V_O$). As a result, the Mg act as carrier suppressor and oxygen binder in the MZTO as well as a Vth controller.

키워드

참고문헌

  1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature, 432, 488 (2004). https://doi.org/10.1038/nature03090
  2. E. G. Chong, Y. S. Chun, and S. Y. Lee, Appl. Phys. Lett., 96, 152102 (2010). https://doi.org/10.1063/1.3387819
  3. E. G. Chong, Y. S. Chun, and S. Y. Lee, Electrochem. Solid State Lett., 14, H96 (2011). https://doi.org/10.1149/1.3518518
  4. E. Fortunato, A. pimentel, A. Goncalve, A. Marques, and R. Martins, Thin Solid Films, 502, 104 (2006). https://doi.org/10.1016/j.tsf.2005.07.311
  5. B. D. Ahn, J. H. Kim, H. S. Kang, C. H. Lee, S. H. Oh, K. W. Kim, G. E. Jang, and S. Y. Lee, Thin Solid Films, 516, 1382 (2008). https://doi.org/10.1016/j.tsf.2007.03.072
  6. E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. B. D. Rego, G. Gonçalves, A. Vila, J. R. Morante, and R. F. P. Martins, Appl. Phys. Lett., 92, 222103 (2008). https://doi.org/10.1063/1.2937473
  7. H. S. Kim, P. D. Byrne, A. Facchetti,and T. J. Marks. J. Am. Chem. Soc., 130, 12580 (2008). https://doi.org/10.1021/ja804262z
  8. J. P. Chang, Y. S. Lin, S. Berger, A. Kepten, R. Bloom, and S. Levy, J. Vac. Sci. Technol., B19, 2137 (2001).
  9. Y. J Chang, D. H. Lee, G. S. Herman, and C. H. Chang, Electrochem. Solid-State Lett., 10, 135 (2007).
  10. D. H. Lee, Y. J. Chang, G. S. Herman, and C. H. Chang, Adv. Mater., 19, 843 (2007). https://doi.org/10.1002/adma.200600961
  11. G. H. Kim, W. H. Jeong, B. D. Ahn, H. S. Shin, H. J. Kim, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, Appl. Phys. Lett., 96, 163506 (2010). https://doi.org/10.1063/1.3413939
  12. H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Thin Solid Films, 516, 1516 (2008). https://doi.org/10.1016/j.tsf.2007.03.161