DOI QR코드

DOI QR Code

Study on Plasma Treatment of electrode for CCFL

CCFL 전극의 플라즈마 처리에 관한 연구

  • Received : 2011.01.03
  • Accepted : 2011.03.10
  • Published : 2011.03.31

Abstract

CCFL(Cold Cathode Fluorescent Lamp)for BLU of LCD and special lighting has been widely utilized. The removal of oxide film formed on electrode of CCFL in manufacturing process is required. In this pape Plasma treatment was carried out to remove the oxide film. To ensure the optimum process, the analysis of sheet resistance, XRD, AFM and solder test was conducted. A minimum sheet resistance and the maximum percentage of the solder coverage ratio were measured in optimal process conditions such as plasma power consumption 600W and processing time of 70 seconds. As the plasma treatment is confirmed to be due to removal of copper oxide, this process is expected to be used as a treatment of electrode for CCFL.

CCFL(Cold Cathode Fluorescent Lamp)는 LCD의 BLU와 특수조명용으로 널리 활용되고 있다. CCFL 제조공정에 있어 CCFL 전극 산화막이 형성되어 솔더 불량을 가져오기 때문에 산화 막 제거가 필요하다. 본 논문에서는 CCFL 전극 산화 막 제거를 위하여 플라즈마 처리를 수행하였다. 플라즈마 처리 최적 공정 확보하기위하여 면 저항, XRD, AFM, 솔더링 테스트 등의 분석이 진행되었다. 플라즈마 최적 공정 조건인 사용전력 600W와 처리시간 70초에서 최소의 면 저항과 최대의 솔더 피복 비율이 측정되었다. 이와 같은 현상은 플라즈마 처리로 구리 산화 막 제거에 기인한 것으로 확인되어 플라즈마를 이용한 전극 산화 막 제거 공정은 CCFL 전극 처리 공정에 활용이 기대된다.

Keywords

References

  1. Chang, Yong N.; Lin, Ching C.; Chan, Shun Y.; Lin, Shian N.; Lin, Jia C. "Development of lighting source with CCFL in T8-tube", Power Electronics Conference (IPEC) 2010, pp.390-397, 2010.
  2. Uetsuki, T.; Kitamoto, R.; Takeda, Y.; Fukumasa, O., "A Study on the relationship between electrode materials and characteristics of CCFL", Plasma Science, 2006.ICOPS2006.pp.193-193,2006.
  3. Lei Zhang; Guangwei Sun; Li Li; Shang, J.K," Effect of Copper Oxide Layer on Solder Wetting Temperature under a Reduced Atmosphere", Electronic Packaging Technology, 2007.ICEPT pp.1-7, 2007.
  4. Charles Lee, Tan Check-Eng Rachel, Ong Wai-Lian Jenny, R. Gopalakrishnan, Khine Nyunt, Andrew Wong,, "Plasma cleaning for plastic ball grid array; A study on surface cleanliness, wire bondability and adhesion", Proceedings of 6th IPFA 1997, pp.50-55, 1997.
  5. Baklanov, M. R. Shamiryan, D. G. Tokei, Zs. Beyer, G. P. Conard, T. Vanhaelemeersch, S. Maex, K., "Characterization of Cu surface cleaning by hydrogen plasma", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.19, 4, pp.1201-1211, Jul., 2001. https://doi.org/10.1116/1.1387084
  6. Belmonte, T. Thiebaut, J. M. Michel, H. Cardoso, R. P. Maliska, A. , "Cuprous‐Cupric Oxide Films on Copper", Journal of Vacuum Science &Technology A: Vacuum, Surfaces, and Films, Volume: 20 Issue: 4, pp 1347-1352, Jul 2002 https://doi.org/10.1116/1.1484096
  7. Yasushi Sawada, Hiroshi Tamaru, Masuhiro Kogoma, Motoaki Kawase and Kenji Hashimoto, "The reduction of copper oxide thin films with hydrogen plasma generated by an atmospheric-pressure glow discharge" Journal of Physics D: Applied Physics, Volume 29, Number 10 PP2539,1996. https://doi.org/10.1088/0022-3727/29/10/003
  8. Jose A. Rodriguez, Jae Y. Kim a,Jonathan C. Hanson, Manuel Pe'rez ,and Anatoly I. Frenkel, "Reduction of CuO in H2", Catalysis Letters Vol. 85, Nos.3.4, pp.247-254, February 2003. https://doi.org/10.1023/A:1022110200942