Journal of the Institute of Electronics Engineers of Korea SC (전자공학회논문지SC)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication Process of Single-walled Carbon Nanotube Sensors Aligned by a Simple Self-assembly Technique

간단한 자기 조립 기법으로 배열된 단일벽 탄소 나노 튜브 센서의 제작공정

  • Kim, Kyeong-Heon (Photonics/Sensor System Center, Robotics/ Systems Division, Korea Institute of Science and Technology) ;
  • Kim, Sun-Ho (Photonics/Sensor System Center, Robotics/ Systems Division, Korea Institute of Science and Technology) ;
  • Byun, Young-Tae (Photonics/Sensor System Center, Robotics/ Systems Division, Korea Institute of Science and Technology)
  • 김경헌 (한국과학기술연구원, 로봇/시스템연구본부, 포토닉스/센서시스템센터) ;
  • 김선호 (한국과학기술연구원, 로봇/시스템연구본부, 포토닉스/센서시스템센터) ;
  • 변영태 (한국과학기술연구원, 로봇/시스템연구본부, 포토닉스/센서시스템센터)
  • Received : 2010.10.22
  • Accepted : 2011.03.08
  • Published : 2011.03.25
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Abstract

In previous reports, we investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWCNTs) on a silicon-dioxide ($SiO_2$) surface by using only a photolithographic process. In this paper, we have fabricated field effect transistors (FETs) with SWCNT channels by using the technique mentioned above. Also, we have electrically measured gating effects of these FETs under different source-drain voltages ($V_{SD}$). These FETs have been fabricated for sensor applications. Photoresist (PR) patterns have been made on a $SiO_2$-grown silicon (Si) substrate by using a photolithographic process. This PR-patterned substrate have been dipped into a SWCNT solution dispersed in dichlorobenzene (DCB). These PR patterns have been removed by using aceton. As a result, a selectively-assembled SWCNT channels in FET arrays have been obtained between source and drain electrodes. Finally, we have successfully fabricated 4 FET arrays based on SWCNT-channels by using our simple self-assembly technique.

이전 보고에서 우리는 오직 포토리소그래피(photolithography) 공정만을 이용하여 단일벽 탄소 나노튜브 (single-walled carbon nanotube; SWCNT)를 산화막 (silicon-dioxide; $SiO_2$)이 형성된 실리콘 (silicon; Si) 기판위에 선택적으로 흡착시키는 공정 방법에 대해 조사했었다. 본 논문에서, 우리는 위에서 설명한 기법을 이용하여 단일벽 탄소 나노튜브 채널을 가진 전계효과 트랜지스터 (field emission transistor; FET)를 제작하였다. 또한, 제작된 단일벽 탄소 나노튜브 기반 전계효과 트랜지스터 소자의 게이트 전압에 따른 전류 전압특성이 조사되었다. 이 전계효과 트랜지스터는 센서로서 작동될 수 있다. 포토리소그래피 공정에 의해 열산화막이 형성된 실리콘 기판 표면위에 단일벽 탄소 나노튜브가 흡착될 부분(채널부분)의 포토레지스트가 노출되도록 포토레지스트 패턴이 형성된다. 이 포토레지스트 패턴이 형성된 기판은 단일벽 탄소 나노튜브가 분산된 다이클로로벤젠 (dichlorobenzene; DCB) 용액 속에 담가진다. 남아 있는 포토레지스트 패턴이 아세톤에 의해 제거 되면, 결과적으로 채널부분 (소오스와 드레인 전극사이) 에 선택적으로 단일벽 탄소 나노튜브 채널이 형성된다. 이 간단한 가기 조립 기술이 이용됨으로써 우리는 단일벽 탄소 나노튜브 채널을 가진 4개의 전계효과 트랜지스터 어레이를 성공적으로 제작하였다.

Keywords

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