한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권4호
  • /
  • Pages.266-270
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  • 2011
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

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Cr/n-AlGaN/GaN Schottky Contact에서 높은 쇼트키 장벽 형성 메카니즘에 관한 연구

Formation Mechanism of a Large Schottky Barrier Height for Cr-AlGaN/GaN Heterostructure

  • 남효덕 (영남대학교 전자공학과 및 LED-IT융합산업화 연구센터) ;
  • 이영민 (영남대학교 전자공학과 및 LED-IT융합산업화 연구센터) ;
  • 장자순 (영남대학교 전자공학과 및 LED-IT융합산업화 연구센터)
  • Nam, Hyo-Duk (Department of Electronic Engineering and LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University) ;
  • Lee, Yeung-Min (Department of Electronic Engineering and LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University) ;
  • Jang, Ja-Soon (Department of Electronic Engineering and LED-IT Fusion Technology Research Center (LIFTRC), Yeungnam University)
  • 투고 : 2011.02.25
  • 심사 : 2011.03.04
  • 발행 : 2011.04.01
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초록

We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (${\pm}0.02$) and 2.07 (${\pm}0.02$) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

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참고문헌

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