한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제24권2호
  • /
  • Pages.126-130
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  • 2011
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Off-axis RF 마그네트론 스퍼터링법을 이용하여 저온에서 결정화된 ITO 박막의 특성

Characterization of the Crystallized ITO Thin Films Grown at a Low Temperature by Off-axis RF Magnetron Sputtering

  • Choi, Hyung-Jin (School of Nano Science and Technology, Chungnam National University) ;
  • Jung, Hyun-June (School of Nano Science and Technology, Chungnam National University) ;
  • Hur, Sung-Gi (School of Nano Science and Technology, Chungnam National University) ;
  • Yoon, Soon-Gil (School of Nano Science and Technology, Chungnam National University)
  • 투고 : 2010.12.02
  • 심사 : 2011.01.07
  • 발행 : 2011.02.01
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초록

In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about $2{\times}10-4{\Omega}{\cdot}cm$ and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.

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참고문헌

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