전자공학회논문지 IE

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

SOI LAN에서 게이트구조가 핫캐리어에 의한 성능저하에 미치는 영향

Impact of Gate Structure On Hot-carrier-induced Performance Degradation in SOI low noise Amplifier

  • 엄우용 (인하공업전문대학 디지털전자과) ;
  • 이병진 (인하대학교 전자공학과)
  • 발행 : 2010.03.25
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초록

본 논문은 SOI 저장음 종폭기에서 게이트구조가 핫캐리어에 의한 성능저하에 미치는 영향융 조사하였다. 회로 시뮬레이션은 H-게이트와 T-게이트를 가지는 SOI MOSFET에서 측정된 S-파라미터와 Agilent사의 ADS를 사용하여 스트레스 전후의 H-게이트와 T-게이트 저잡음 증폭기의 성능을 비교하였다. 또한 저잡음 증폭기의 장치 열화와 성능 열화 사이의 관계뿐만 아니라 임피던스 매칭(S11), 잡음 지수와 이득에 관한 저잡음 증폭기의 성능 지수 등을 논의하였다.

This paper presents new results of the impact of gate structure on hot-carrier-induced performance degradation in SOI low noise amplifier. Circuit simulations were carried out using the measured S-parameters of H--gate and T-gate SOI MOSFETs and Agilent's Advanced Design System (ADS) to compare the performance of H-gate LNA and T-gate LNA before and after stress. We will discuss the figure of merit for the characterization of low noise amplifier in terms of impedance matching (S11), noise figure, and gain as well as the relation between device degradation and performance degradation of LNA.

키워드

참고문헌

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