통합자연과학논문집 (Journal of Integrative Natural Science)

조선대학교 기초과학연구원 (The Basic Science Institute Chosun University)
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OTFT용 용액공정의 에틸렌-브리지드 실세스퀴옥산 게이트 절연체

Solution-Processed Gate Insulator of Ethylene-Bridged Silsesquioxnae for Organic Field-Effect Transistor

  • Lee, Duck-Hee (Department of Chemistry, Chonnam National University) ;
  • Jeong, Hyun-Dam (Department of Chemistry, Chonnam National University)
  • 투고 : 2010.02.26
  • 심사 : 2010.03.20
  • 발행 : 2010.03.31
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초록

Ethylene-bridged silsesquioxane resins were synthesized from two monomers: 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane. The silsesquioxane thin films were spin-coated from the copolymerized resins on silicon wafer. Metal insulator metal (MIM), metal insulator semiconductor (MIS) devices were utilized to investigate the electrical properties of the copolymerized thin films. As the films were inserted as gate insulator in the OTFT devices, the field effect mobilitites were evaluated by employing Poly(3-hexylthiophene) (P3HT) as organic semiconductor, which shows that their dielectric properties and mobility values are dependent on the molecular structures and Si-OH concentration involving in the films.

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