Bulletin of the Korean Chemical Society

  • 제31권1호
  • /
  • Pages.112-115
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  • 2010
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  • 0253-2964(pISSN)
  • /
  • 1229-5949(eISSN)
대한화학회 (Korean Chemical Society)
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Properties of ZnO:Al Films Prepared by Spin Coating of Aged Precursor Solution

  • Shrestha, Shankar Prasad (Department of Physics, Patan Multiple Campus, Tribhuvan University) ;
  • Ghimire, Rishi (Department of Physics, Kritipur Campus, Tribhuvan University) ;
  • Nakarmi, Jeevan Jyoti (Department of Physics, Kritipur Campus, Tribhuvan University) ;
  • Kim, Young-Sung (Technology Innovation Center, Sungkyunkwan University) ;
  • Shrestha, Sabita (Department of Physics and Center for Nanotubes and Nanostructured Composite, Sungkyunkwan University) ;
  • Park, Chong-Yun (Department of Physics and Center for Nanotubes and Nanostructured Composite, Sungkyunkwan University) ;
  • Boo, Jin-Hyo (Department of Chemistry and Institute of Basic Science, Sungkyunkwan University)
  • 발행 : 2010.01.20
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초록

Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity ($\rho$), carrier concentration (n), and hall mobility ($\mu$) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity ($8.5 \times 10^{-2}$ ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

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참고문헌

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