대한금속재료학회지 (Korean Journal of Metals and Materials)

  • 제47권5호
  • /
  • Pages.311-315
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  • 2009
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  • 1738-8228(pISSN)
  • /
  • 2288-8241(eISSN)
대한금속재료학회 (The Korean Institute of Metals and Materials)
권호 표지

일렉트론홀로그래피와 주사정전용량현미경 기술을 이용한 2차원 도펀트 프로파일의 측정

Measurement of 2-Dimensional Dopant Profiles by Electron Holography and Scanning Capacitance Microscopy Methods

  • 박경우 (나노종합팹센터 특성평가팀) ;
  • ;
  • 현문섭 (나노종합팹센터 특성평가팀) ;
  • 유정호 (나노종합팹센터 특성평가팀) ;
  • 양준모 (나노종합팹센터 특성평가팀) ;
  • 윤순길 (충남대학교 나노정보시스템공학과)
  • Park, Kyoung-Woo (Measurement & Analysis Team, National Nanofab Center) ;
  • Shaislamov, Ulugbek (Measurement & Analysis Team, National Nanofab Center) ;
  • Hyun, Moon Seop (Measurement & Analysis Team, National Nanofab Center) ;
  • Yoo, Jung Ho (Measurement & Analysis Team, National Nanofab Center) ;
  • Yang, Jun-Mo (Measurement & Analysis Team, National Nanofab Center) ;
  • Yoon, Soon-Gil (School of Nano Science and Technology, Chungnam National University)
  • 투고 : 2009.01.06
  • 발행 : 2009.05.25
⟨ 이전 논문 다음 논문 ⟩

초록

2-dimensional (2D) dopant profiling in semiconductor device was carried out by electron holography and scanning capacitance microscopy methods with the same multi-layered p-n junction sample. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.

키워드

과제정보

연구 과제 주관 기관 : 지식경제부

참고문헌

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