• Title/Summary/Keyword: electron holography

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Electron Holography of Advanced Nanomaterials

  • Shindo, D.;Park, H.S.;Kim, J.J.;Oikawa, T.;Tomita, T.
    • Applied Microscopy
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    • v.36 no.spc1
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    • pp.63-69
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    • 2006
  • By utilizing a field emission gun and a biprism installed on a transmission electron microscope (TEM), electron holography is extensively carried out to visualize the electric and magnetic fields of nanomaterials. In the electric field analysis, the distribution of electric potential in a sharp tip made of W coated with $ZrO_2$ is visualized by applying the voltage to the tip. Denser contour lines due to the electric potential are observed with an increase in the bias voltage. In the magnetic field analysis by producing the strong magnetic field with a sharp magnetic needle made of a permanent magnet, the in situ experiment is carried out to investigate the magnetization of hard magnetic materials. The results of these experiments clearly demonstrate that electron holography is a promising advanced transmission electron microscopy technique to characterize the electric and magnetic properties of nanomaterials.

Cross-Sectional Transmission Electron Microscopy Specimen Preparation Technique by Backside Ar Ion Milling

  • Yoo, Jung Ho;Yang, Jun-Mo
    • Applied Microscopy
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    • v.45 no.4
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    • pp.189-194
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    • 2015
  • Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction profiles in semiconductors with the sample quality sufficient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (> $1{\mu}m$).

Precise Comparison of Two-dimensional Dopant Profiles Measured by Low-voltage Scanning Electron Microscopy and Electron Holography Techniques

  • Hyun, Moon-Seop;Yoo, Jung-Ho;Kwak, Noh-Yeal;Kim, Won;Rhee, Choong-Kyun;Yang, Jun-Mo
    • Applied Microscopy
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    • v.42 no.3
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    • pp.158-163
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    • 2012
  • Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profiling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various microscopic techniques.

Measurement of 2-Dimensional Dopant Profiles by Electron Holography and Scanning Capacitance Microscopy Methods (일렉트론홀로그래피와 주사정전용량현미경 기술을 이용한 2차원 도펀트 프로파일의 측정)

  • Park, Kyoung-Woo;Shaislamov, Ulugbek;Hyun, Moon Seop;Yoo, Jung Ho;Yang, Jun-Mo;Yoon, Soon-Gil
    • Korean Journal of Metals and Materials
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    • v.47 no.5
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    • pp.311-315
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    • 2009
  • 2-dimensional (2D) dopant profiling in semiconductor device was carried out by electron holography and scanning capacitance microscopy methods with the same multi-layered p-n junction sample. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile measurement can be increased through precise comparison of 2D profiles obtained from various techniques.

Electron Beam Coherency Determined from Interferograms of Carbon Nanotubes

  • Cho, B.;Oshima, C.
    • Bulletin of the Korean Chemical Society
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    • v.34 no.3
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    • pp.892-898
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    • 2013
  • A field emission projection microscope was constructed to investigate the atomic and chemical-bonding structure of molecules using electron in-line holography. Fringes of carbon nanotube images were found to be interferograms equivalent to those created by the electron biprism in conventional electron microscopy. By exploiting carbon nanotubes as the filament of the electron biprism, we measured the transverse coherence length of the electron beam from tungsten field emitters. The measurements revealed that a partially coherent electron-beam was emitted from a finite area.

Twin-Image Noise Effects in Optical scanning Holography

  • Doh, Kyu-Bong;Lee, Hwang-Suk
    • Journal of the Optical Society of Korea
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    • v.4 no.1
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    • pp.48-53
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    • 2000
  • In Optical Scanning Holography(OSH), 3-D holographic information of an object is generated by 2-D active optical scanning. The optical scanning beam can be a time-dependent Gaussian apodized Fresnel zone plate. In this technique, the holographic information manifests itself as an electric signal which can be sent to an electron-beam-addressed spatial light modulator for coherent image reconstruction. In this paper, we briefly review optical scanning holography and analyze the resolution achievable with the system. We also present mathmatical expressions of real and virtual images which are responsible for holographic image reconstruction. We then show the twin-image noise effect on the reconstruction in conjunction with the size of the Fresnel zone pattern through computer simulation.

Measurement of Width and Step-Height of Photolithographic Product Patterns by Using Digital Holography (디지털 홀로그래피를 이용한 포토리소그래피 공정 제품 패터닝의 폭과 단차 측정)

  • Shin, Ju Yeop;Kang, Sung Hoon;Ma, Hye Joon;Kwon, Ik Hwan;Yang, Seung Pil;Jung, Hyun Chul;Hong, Chung Ki;Kim, Kyeong Suk
    • Journal of the Korean Society for Nondestructive Testing
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    • v.36 no.1
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    • pp.18-26
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    • 2016
  • The semiconductor industry is one of the key industries of Korea, which has continued growing at a steady annual growth rate. Important technology for the semiconductor industry is high integration of devices. This is to increase the memory capacity for unit area, of which key is photolithography. The photolithography refers to a technique for printing the shadow of light lit on the mask surface on to wafer, which is the most important process in a semiconductor manufacturing process. In this study, the width and step-height of wafers patterned through this process were measured to ensure uniformity. The widths and inter-plate heights of the specimens patterned using photolithography were measured using transmissive digital holography. A transmissive digital holographic interferometer was configured, and nine arbitrary points were set on the specimens as measured points. The measurement of each point was compared with the measurements performed using a commercial device called scanning electron microscope (SEM) and Alpha Step. Transmission digital holography requires a short measurement time, which is an advantage compared to other techniques. Furthermore, it uses magnification lenses, allowing the flexibility of changing between high and low magnifications. The test results confirmed that transmissive digital holography is a useful technique for measuring patterns printed using photolithography.

Resolution in Optical Scanning Holography (광스캔닝 훌로그래피의 해상도)

  • Doh, Kyu Bong
    • Journal of Advanced Navigation Technology
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    • v.2 no.2
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    • pp.126-131
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    • 1998
  • In optical scanning holography, 3-D holographic information of an object is generated by 2-D active optical scanning. The optical scanning beam can be a time-dependent Gaussian apodized Fresnel zone plate. In this technique, the holographic information manifests itself as an electrical signal which can be sent to an electron-beam-addressed spatial light modulator for coherent image reconstruction. This technique can be applied to 3-D optical remote sensing especially for identifying flying objects. In this paper, we first briefly review optical scanning holography and analyze the resolution achievable with the system. We then present mathematical expression of real and virtual image which are responsible for holographic image reconstruction by using Gaussian beam profile.

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High-Density Quantum Nanostructure for Single Mode Distributed Feedback Semiconductor Lasers by One-Step Growth (단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성)

  • Son, Chang-Sik;Baek, Jong-Hyeob;Kim, Seong-Il;Park, Young-Ju;Kim, Yong-Tae;Choi, Hoon-Sang;Choi, In-Hoon
    • Korean Journal of Materials Research
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    • v.13 no.8
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    • pp.485-490
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    • 2003
  • We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.